Issued Patents 2017
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9852910 | Vertical power transistor with dual buffer regions | — | 2017-12-26 |
| 9854686 | Preparation method of a thin power device | Yuping Gong, Yan Xun Xue, Ming-Chen Lu, Ping Huang, Jun Lu | 2017-12-26 |
| 9825128 | Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings | — | 2017-11-21 |
| 9818829 | Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs | Yeeheng Lee, Sik Lui, Jongoh Kim, Hong Chang, Madhur Bobde +1 more | 2017-11-14 |
| 9805933 | Vertical power transistor with deep floating termination regions | — | 2017-10-31 |
| 9793346 | Semiconductor device with threshold MOSFET for high voltage termination | Madhur Bobde | 2017-10-17 |
| 9793393 | MOSFET device and fabrication | John Chen, Il Kwan Lee, Hong Chang, Wenjun Li, Anup Bhalla | 2017-10-17 |
| 9786583 | Power semiconductor package device having locking mechanism, and preparation method thereof | Yan Xun Xue, Yueh-Se Ho, Jun Lu, De Mei Gong | 2017-10-10 |
| 9768146 | Battery protection package and process of making the same | Zhiqiang Niu, Yan Xun Xue, Man Sheng Hu, Jun Lu, Yueh-Se Ho | 2017-09-19 |
| 9748375 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Daniel Ng, Daniel Calafut, Madhur Bobde, Anup Bhalla, Ji Pan +2 more | 2017-08-29 |
| 9741808 | Split-gate trench power MOSFET with protected shield oxide | Yeeheng Lee, Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang +6 more | 2017-08-22 |
| 9735094 | Combined packaged power semiconductor device | Yueh-Se Ho, Yan Yun Xue, Jun Lu | 2017-08-15 |
| 9722073 | Lateral super-junction MOSFET device and termination structure | Madhur Bobde, Lingpeng Guan, Karthik Padmanabhan | 2017-08-01 |
| 9704955 | Nanotube semiconductor devices | Xiaobin Wang, Anup Bhalla, John Chen, Hong Chang | 2017-07-11 |
| 9704948 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Yongping Ding, Xiaobin Wang, Madhur Bobde | 2017-07-11 |
| 9679833 | Semiconductor package with small gate clip and assembly method | Yan Xun Xue, Yueh-Se Ho, Jun Lu, Ming-Chen Lu, Hongtao Gao | 2017-06-13 |
| 9666666 | Dual-gate trench IGBT with buried floating P-type shield | Jun Hu, Madhur Bobde | 2017-05-30 |
| 9653383 | Semiconductor device with thick bottom metal and preparation method thereof | Yan Xun Xue, Jun Lu, Ming-Chen Lu, Yan Huo, Aihua Lu | 2017-05-16 |
| 9620630 | Injection control in semiconductor power devices | Madhur Bobde, Jun Hu, Lingpeng Guan, Lei Zhang, Jongoh Kim | 2017-04-11 |
| 9595587 | Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs | Yeeheng Lee, Sik Lui, Jongoh Kim, Hong Chang, Madhur Bobde +1 more | 2017-03-14 |
| 9595609 | Semiconductor device including superjunction structure formed using angled implant process | Karthik Padmanabhan, Madhur Bobde, Lingpeng Guan, Lei Zhang | 2017-03-14 |
| 9577072 | Termination design for high voltage device | Lingpeng Guan, Anup Bhalla | 2017-02-21 |
| 9564406 | Battery protection package and process of making the same | Zhiqiang Niu, Yan Xun Xue, Man Sheng Hu, Jun Lu, Yueh-Se Ho | 2017-02-07 |
| 9548352 | Semiconductor device with field threshold MOSFET for high voltage termination | Madhur Bobde | 2017-01-17 |