| 9806175 |
Power MOSFET device structure for high frequency applications |
Daniel Ng., Tiesheng Li, Sik Lui |
2017-10-31 |
| 9793393 |
MOSFET device and fabrication |
John Chen, Il Kwan Lee, Hong Chang, Wenjun Li, Hamza Yilmaz |
2017-10-17 |
| 9748375 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Ji Pan +2 more |
2017-08-29 |
| 9741851 |
Trench junction barrier controlled Schottky |
Sik Lui |
2017-08-22 |
| 9728655 |
Termination structure for gallium nitride schottky diode |
TingGang Zhu, Ping Huang, Yueh-Se Ho |
2017-08-08 |
| 9721944 |
Hybrid wide-bandgap semiconductor bipolar switches |
Leonid Fursin |
2017-08-01 |
| 9716156 |
Device structure and manufacturing method using HDP deposited source-body implant block |
Francois Hebert, Sung-Shan Tai, Sik Lui |
2017-07-25 |
| 9716057 |
Offset leadframe cascode package |
Hao Zhang |
2017-07-25 |
| 9704955 |
Nanotube semiconductor devices |
Hamza Yilmaz, Xiaobin Wang, John Chen, Hong Chang |
2017-07-11 |
| 9685523 |
Diode structures with controlled injection efficiency for fast switching |
Madhur Bobde, Harsh Naik, Lingpeng Guan, Sik Lui |
2017-06-20 |
| 9653618 |
Planar triple-implanted JFET |
Zhongda Li |
2017-05-16 |
| 9647059 |
Manufacturing methods for accurately aligned and self-balanced superjunction devices |
Lingping Guan, Madhur Bobde, Yeeheng Lee, John Chen, Moses Ho |
2017-05-09 |
| 9620584 |
Integrated Schottky diode in high voltage semiconductor device |
Lingpeng Guan, Madhur Bobde, TingGang Zhu |
2017-04-11 |
| 9620498 |
Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection |
Yi Su, Daniel Ng |
2017-04-11 |
| 9577072 |
Termination design for high voltage device |
Lingpeng Guan, Hamza Yilmaz |
2017-02-21 |
| 9570404 |
Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application |
Ji Hwan Pang, Daniel Ng, Xiaobin Wang |
2017-02-14 |
| 9543413 |
Corner layout for high voltage semiconductor devices |
Lingpeng Guan |
2017-01-10 |