Issued Patents 2017
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9842802 | Integrated circuit device featuring an antifuse and method of making same | John Jianhong Zhu, Xia Li | 2017-12-12 |
| 9812188 | Static random-access memory (SRAM) sensor for bias temperature instability | Niladri Narayan Mojumder, Xiaonan Chen, Stanley Seungchul Song, Choh Fei Yeap | 2017-11-07 |
| 9806083 | Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance, and related methods | Niladri Narayan Mojumder, Stanley Seungchul Song, Kern Rim, Choh Fei Yeap | 2017-10-31 |
| 9786356 | Memory device with adaptive voltage scaling based on error information | Niladri Narayan Mojumder, Jonathan Liu, Choh Fei Yeap | 2017-10-10 |
| 9773567 | Reduced silicon-oxide-nitride-oxide-silicon (SONOS) flash memory program disturb | Guoqing Chen, Paul Hoayun | 2017-09-26 |
| 9691868 | Merging lithography processes for gate patterning | Stanley Seungchul Song, Choh Fei Yeap | 2017-06-27 |
| 9666481 | Reduced height M1 metal lines for local on-chip routing | Stanley Seungchul Song, Choh Fei Yeap, Niladri Narayan Mojumder, Mustafa Badaroglu | 2017-05-30 |
| 9576801 | High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory | Xia Li, Jeffrey Junhao Xu, Bin Yang, Xiaonan Chen, Yu Lu | 2017-02-21 |
| 9564361 | Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device | Stanley Seungchul Song, Choh Fei Yeap, John Jianhong Zhu | 2017-02-07 |
| 9536596 | Three-port bit cell having increased width | Niladri Narayan Mojumder, Stanley Seungchul Song, Choh Fei Yeap | 2017-01-03 |