Issued Patents 2017
Showing 25 most recent of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9852803 | Dummy word line control scheme for non-volatile memory | Vinh Diep, Liang Pang, Ching-Huang Lu | 2017-12-26 |
| 9831118 | Reducing neighboring word line in interference using low-k oxide | Liang Pang, Jayavel Pachamuthu, Ching-Huang Lu | 2017-11-28 |
| 9830963 | Word line-dependent and temperature-dependent erase depth | Liang Pang, Vinh Diep, Ching-Huang Lu | 2017-11-28 |
| 9812462 | Memory hole size variation in a 3D stacked memory | Liang Pang, Ashish Baraskar, Yanli Zhang | 2017-11-07 |
| 9793283 | High conductivity channel for 3D memory | Liang Pang, Jayavel Pachamuthu | 2017-10-17 |
| 9785493 | Data recovery method after word line-to-word line short circuit | Zhengyi Zhang | 2017-10-10 |
| 9786378 | Equalizing erase depth in different blocks of memory cells | Zhengyi Zhang, Liang Pang, Caifu Zeng, Xuehong Yu | 2017-10-10 |
| 9760307 | Weighted read scrub for nonvolatile memory including memory holes | Chris Avila, Alexander Kwok-Tung Mak, Steven T. Sprouse | 2017-09-12 |
| 9748266 | Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereof | Ashish Baraskar, Yanli Zhang, Liang Pang, Ching-Huang Lu, Matthias Baenninger | 2017-08-29 |
| 9748267 | Three dimensional NAND device with channel contacting conductive source line and method of making thereof | Yanli Zhang, Go Shoji, Johann Alsmeier, Jayavel Pachamuthu, Jiahui Yuan | 2017-08-29 |
| 9747992 | Non-volatile memory with customized control of injection type of disturb during read operations | Hong-Yan Chen | 2017-08-29 |
| 9715937 | Dynamic tuning of first read countermeasures | Liang Pang, Jiahui Yuan, Charles See Yeung Kwong | 2017-07-25 |
| 9716101 | Forming 3D memory cells after word line replacement | Zhenyu Lu, Hiro Kinoshita, Daxin Mao, Johann Alsmeier, Wenguang Shi +3 more | 2017-07-25 |
| 9673216 | Method of forming memory cell film | Ashish Baraskar, Liang Pang, Ching-Huang Lu | 2017-06-06 |
| 9666593 | Alternating refractive index in charge-trapping film in three-dimensional memory | Liang Pang, Jayavel Pachamuthu | 2017-05-30 |
| 9659656 | Techniques for programming of select gates in NAND memory | Hao Thai Nguyen, Man Lung Mui, Khanh Nguyen, Seungpil Lee, Toru Ishigaki | 2017-05-23 |
| 9640273 | Mitigating hot electron program disturb | Hong-Yan Chen, Wei Zhao | 2017-05-02 |
| 9620233 | Word line ramping down scheme to purge residual electrons | Xuehong Yu, Liang Pang | 2017-04-11 |
| 9607707 | Weak erase prior to read | Liang Pang, Xuehong Yu, Jingjian Ren | 2017-03-28 |
| 9595342 | Method and apparatus for refresh programming of memory cells based on amount of threshold voltage downshift | Liang Pang, Jian Chen | 2017-03-14 |
| 9583198 | Word line-dependent and temperature-dependent pass voltage during programming | Liang Pang, Jiahui Yuan, Jingjian Ren | 2017-02-28 |
| 9576971 | Three-dimensional memory structure having a back gate electrode | Yanli Zhang, Johann Alsmeier, Akira Matsudaira | 2017-02-21 |
| 9564213 | Program verify for non-volatile storage | Yongke Sun, Jiahui Yuan | 2017-02-07 |
| 9559117 | Three-dimensional non-volatile memory device having a silicide source line and method of making thereof | Jayavel Pachamuthu, Johann Alsmeier | 2017-01-31 |
| 9552251 | Neighboring word line program disturb countermeasure for charge-trapping memory | Jiahui Yuan, Jian Chen | 2017-01-24 |