| 9831266 |
Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same |
Johann Alsmeier, Jin Liu, Yanli Zhang |
2017-11-28 |
| 9824966 |
Three-dimensional memory device containing a lateral source contact and method of making the same |
Senaka Kanakamedala, Raghuveer S. Makala, Yanli Zhang, Rahul Sharangpani, Yao-Sheng Lee |
2017-11-21 |
| 9818759 |
Through-memory-level via structures for a three-dimensional memory device |
Jin Liu, Johann Alsmeier, Jixin Yu, Yoko Furihata, Hiroyuki Ogawa |
2017-11-14 |
| 9818693 |
Through-memory-level via structures for a three-dimensional memory device |
Fumiaki Toyama, Hiroyuki Ogawa, Yoko Furihata, Yuki Mizutani, Jixin Yu +2 more |
2017-11-14 |
| 9805805 |
Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof |
Yanli Zhang, Johann Alsmeier |
2017-10-31 |
| 9728546 |
3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same |
Andrey Serov, Yanli Zhang, Henry Chien, Johann Alsmeier |
2017-08-08 |
| 9698149 |
Non-volatile memory with flat cell structures and air gap isolation |
Vinod R. Purayath, George Matamis, Henry Chien, Yuan Zhang |
2017-07-04 |
| 9620514 |
3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same |
Yanli Zhang, Henry Chien, Johann Alsmeier |
2017-04-11 |
| 9576975 |
Monolithic three-dimensional NAND strings and methods of fabrication thereof |
Yanli Zhang, Raghuveer S. Makala, Jin Liu, Murshed Chowdhury, Camilla Huang +1 more |
2017-02-21 |
| 9552991 |
Trench vertical NAND and method of making thereof |
Akira Matsudaira, Yuan Zhang, Vinod R. Purayath, Donovan Lee |
2017-01-24 |
| 9548311 |
Non-volatile storage element with suspended charge storage region |
Donovan Lee, Vinod R. Purayath |
2017-01-17 |