| 9853210 |
Reduced process degradation of spin torque magnetoresistive random access memory |
Anthony J. Annunziata, Nathan P. Marchack, Stephen M. Rossnagel |
2017-12-26 |
| 9812370 |
III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid technology |
Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight |
2017-11-07 |
| 9748310 |
Structure and method to reduce shorting in STT-MRAM device |
Anthony J. Annunziata, Nathan P. Marchack |
2017-08-29 |
| 9705071 |
Structure and method to reduce shorting and process degradation in STT-MRAM devices |
Anthony J. Annunziata, Janusz J. Nowak, Eugene J. O'Sullivan |
2017-07-11 |
| 9705077 |
Spin torque MRAM fabrication using negative tone lithography and ion beam etching |
Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Qinghuang Lin +1 more |
2017-07-11 |
| 9691972 |
Low temperature encapsulation for magnetic tunnel junction |
Anthony J. Annunziata, Sebastian U. Engelmann, Eric A. Joseph, Nathan P. Marchack, Deborah A. Neumayer +1 more |
2017-06-27 |
| 9673386 |
Structure and method to reduce shorting in STT-MRAM device |
Anthony J. Annunziata, Nathan P. Marchack |
2017-06-06 |
| 9660179 |
Enhanced coercivity in MTJ devices by contact depth control |
Anthony J. Annunziata, Nathan P. Marchack |
2017-05-23 |
| 9653679 |
Magnetoresistive structures with stressed layer |
Anthony J. Annunziata, Chandrasekharan Kothandaraman, Adam M. Pyzyna |
2017-05-16 |
| 9601686 |
Magnetoresistive structures with stressed layer |
Anthony J. Annunziata, Chandrasekharan Kothandaraman, Adam M. Pyzyna |
2017-03-21 |
| 9543388 |
Complementary metal-oxide silicon having silicon and silicon germanium channels |
Isaac Lauer, Alexander Reznicek, Jeffrey W. Sleight |
2017-01-10 |
