| 9853210 |
Reduced process degradation of spin torque magnetoresistive random access memory |
Anthony J. Annunziata, Gen P. Lauer, Stephen M. Rossnagel |
2017-12-26 |
| 9748310 |
Structure and method to reduce shorting in STT-MRAM device |
Anthony J. Annunziata, Gen P. Lauer |
2017-08-29 |
| 9728717 |
Magnetic tunnel junction patterning using low atomic weight ion sputtering |
Anthony J. Annunziata, Rohit Kilaru, Hiroyuki Miyazoe |
2017-08-08 |
| 9705077 |
Spin torque MRAM fabrication using negative tone lithography and ion beam etching |
Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Gen P. Lauer +1 more |
2017-07-11 |
| 9691972 |
Low temperature encapsulation for magnetic tunnel junction |
Anthony J. Annunziata, Sebastian U. Engelmann, Eric A. Joseph, Gen P. Lauer, Deborah A. Neumayer +1 more |
2017-06-27 |
| 9673386 |
Structure and method to reduce shorting in STT-MRAM device |
Anthony J. Annunziata, Gen P. Lauer |
2017-06-06 |
| 9660179 |
Enhanced coercivity in MTJ devices by contact depth control |
Anthony J. Annunziata, Gen P. Lauer |
2017-05-23 |
