| 9524779 |
Three dimensional vertical NAND device with floating gates |
Henry Chien, George Matamis, Thomas Jongwan Kwon, Yao-Sheng Lee |
2016-12-20 |
| 9502471 |
Multi tier three-dimensional memory devices including vertically shared bit lines |
Zhenyu Lu, Henry Chien, Johann Alsmeier, Koji Miyata, Tong Zhang +7 more |
2016-11-22 |
| 9466644 |
Resistance-switching memory cell with multiple raised structures in a bottom electrode |
George Matamis, Vinod R. Purayath, Yuan Zhang, Henry Chien |
2016-10-11 |
| 9449982 |
Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks |
Zhenyu Lu, Sateesh Koka, Raghuveer S. Makala, Yao-Sheng Lee, Jayavel Pachamuthu +2 more |
2016-09-20 |
| 9437813 |
Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask |
George Matamis, Vinod R. Purayath, Yuan Zhang, Henry Chien |
2016-09-06 |
| 9379120 |
Metal control gate structures and air gap isolation in non-volatile memory |
Vinod R. Purayath, Tuan Pham, Hiroyuki Kinoshita, Yuan Zhang, Henry Chin +3 more |
2016-06-28 |
| 9349740 |
Non-volatile storage element with suspended charge storage region |
Donovan Lee, Vinod R. Purayath |
2016-05-24 |
| 9331181 |
Nanodot enhanced hybrid floating gate for non-volatile memory devices |
Donovan Lee, George Samachisa, Henry Chien, George Matamis, Vinod R. Purayath |
2016-05-03 |
| 9252151 |
Three dimensional NAND device with birds beak containing floating gates and method of making thereof |
Henry Chien, Donovan Lee, Vinod R. Purayath, Yuan Zhang, George Matamis |
2016-02-02 |
| 9230971 |
NAND string containing self-aligned control gate sidewall cladding |
Donovan Lee, Vinod R. Purayath, George Matamis |
2016-01-05 |