| 9530785 |
Three-dimensional memory devices having a single layer channel and methods of making thereof |
Sateesh Koka, Zhenyu Lu, Wei Zhao, Ching-Huang Lu, Henry Chien +6 more |
2016-12-27 |
| 9524977 |
Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure |
Rahul Sharangpani, Raghuveer S. Makala, Sateesh Koka, Tomohiro Kubo, Junichi Ariyoshi |
2016-12-20 |
| 9524779 |
Three dimensional vertical NAND device with floating gates |
James Kai, Henry Chien, Thomas Jongwan Kwon, Yao-Sheng Lee |
2016-12-20 |
| 9515079 |
Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack |
Sateesh Koka, Raghuveer S. Makala, Somesh Peri, Rahul Sharangpani, Yao-Sheng Lee +1 more |
2016-12-06 |
| 9496419 |
Ruthenium nucleation layer for control gate electrodes in a memory structure |
Rahul Sharangpani, Raghuveer S. Makala, Sateesh Koka |
2016-11-15 |
| 9484357 |
Selective blocking dielectric formation in a three-dimensional memory structure |
Raghuveer S. Makala, Rahul Sharangpani, Senaka Kanakamedala, Xiaofeng Liang, Sateesh Koka +1 more |
2016-11-01 |
| 9478558 |
Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer |
Sateesh Koka, Senaka Kanakamedala, Raghuveer S. Makala, Rahul Sharangpani, Yanli Zhang +1 more |
2016-10-25 |
| 9466644 |
Resistance-switching memory cell with multiple raised structures in a bottom electrode |
James Kai, Vinod R. Purayath, Yuan Zhang, Henry Chien |
2016-10-11 |
| 9437813 |
Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask |
James Kai, Vinod R. Purayath, Yuan Zhang, Henry Chien |
2016-09-06 |
| 9397107 |
Methods of making three dimensional NAND devices |
Raghuveer S. Makala, Yao-Sheng Lee, Senaka Kanakamedala, Yanli Zhang, Johann Alsmeier |
2016-07-19 |
| 9397046 |
Fluorine-free word lines for three-dimensional memory devices |
Rahul Sharangpani, Raghuveer S. Makala, Sateesh Koka |
2016-07-19 |
| 9379132 |
NAND memory strings and methods of fabrication thereof |
Sateesh Koka, Raghuveer S. Makala, Yanli Zhang, Senaka Kanakamedala, Rahul Sharangpani +1 more |
2016-06-28 |
| 9379120 |
Metal control gate structures and air gap isolation in non-volatile memory |
Vinod R. Purayath, Tuan Pham, Hiroyuki Kinoshita, Yuan Zhang, Henry Chin +3 more |
2016-06-28 |
| 9379124 |
Vertical floating gate NAND with selectively deposited ALD metal films |
Rahul Sharangpani, Raghuveer S. Makala, Thomas Jongwan Kwon, Senaka Kanakamedala |
2016-06-28 |
| 9356031 |
Three dimensional NAND string memory devices with voids enclosed between control gate electrodes |
Yao-Sheng Lee, Jayavel Pachamuthu, Raghuveer S. Makala, Johann Alsmeier, Henry Chien |
2016-05-31 |
| 9331181 |
Nanodot enhanced hybrid floating gate for non-volatile memory devices |
Donovan Lee, James Kai, George Samachisa, Henry Chien, Vinod R. Purayath |
2016-05-03 |
| 9305932 |
Methods of making three dimensional NAND devices |
Senaka Kanakamedala, Yanli Zhang, Raghuveer S. Makala, Yao-Sheng Lee, Johann Alsmeier |
2016-04-05 |
| 9305849 |
Method of making a three dimensional NAND device |
Masanori Tsutsumi, Shigehiro Fujino, Sateesh Koka, Senaka Kanakamedala, Yanli Zhang +3 more |
2016-04-05 |
| 9252151 |
Three dimensional NAND device with birds beak containing floating gates and method of making thereof |
Henry Chien, Donovan Lee, Vinod R. Purayath, Yuan Zhang, James Kai |
2016-02-02 |
| 9236396 |
Three dimensional NAND device and method of making thereof |
Sateesh Koka, Senaka Kanakamedala, Yanli Zhang, Raghuveer S. Makala, Rahul Sharangpani +1 more |
2016-01-12 |
| 9230974 |
Methods of selective removal of blocking dielectric in NAND memory strings |
Jayavel Pachamuthu, Johann Alsmeier, Henry Chien |
2016-01-05 |
| 9230983 |
Metal word lines for three dimensional memory devices |
Rahul Sharangpani, Raghuveer S. Makala |
2016-01-05 |
| 9230971 |
NAND string containing self-aligned control gate sidewall cladding |
Donovan Lee, Vinod R. Purayath, James Kai |
2016-01-05 |