| 9530785 |
Three-dimensional memory devices having a single layer channel and methods of making thereof |
Sateesh Koka, Zhenyu Lu, Wei Zhao, Ching-Huang Lu, Yingda Dong +6 more |
2016-12-27 |
| 9530790 |
Three-dimensional memory device containing CMOS devices over memory stack structures |
Zhenyu Lu, Andrew Lin, Johann Alsmeier, Peter Rabkin, Wei Zhao +2 more |
2016-12-27 |
| 9524779 |
Three dimensional vertical NAND device with floating gates |
James Kai, George Matamis, Thomas Jongwan Kwon, Yao-Sheng Lee |
2016-12-20 |
| 9524976 |
Method of integrating select gate source and memory hole for three-dimensional non-volatile memory device |
Jayavel Pachamuthu, Johann Alsmeier |
2016-12-20 |
| 9520406 |
Method of making a vertical NAND device using sequential etching of multilayer stacks |
Raghuveer S. Makala, Yao-Sheng Lee, Jayavel Pachamuthu, Johann Alsmeier |
2016-12-13 |
| 9515080 |
Vertical NAND and method of making thereof using sequential stack etching and landing pad |
Akira Takahashi, Chi-Ming Wang, Johann Alsmeier, Xiying Costa |
2016-12-06 |
| 9502471 |
Multi tier three-dimensional memory devices including vertically shared bit lines |
Zhenyu Lu, Johann Alsmeier, Koji Miyata, Tong Zhang, Man Lung Mui +7 more |
2016-11-22 |
| 9466644 |
Resistance-switching memory cell with multiple raised structures in a bottom electrode |
George Matamis, James Kai, Vinod R. Purayath, Yuan Zhang |
2016-10-11 |
| 9449982 |
Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks |
Zhenyu Lu, Sateesh Koka, James Kai, Raghuveer S. Makala, Yao-Sheng Lee +2 more |
2016-09-20 |
| 9449981 |
Three dimensional NAND string memory devices and methods of fabrication thereof |
Jayavel Pachamuthu, Johann Alsmeier |
2016-09-20 |
| 9437813 |
Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask |
George Matamis, James Kai, Vinod R. Purayath, Yuan Zhang |
2016-09-06 |
| 9379120 |
Metal control gate structures and air gap isolation in non-volatile memory |
Vinod R. Purayath, Tuan Pham, Hiroyuki Kinoshita, Yuan Zhang, Henry Chin +3 more |
2016-06-28 |
| 9356031 |
Three dimensional NAND string memory devices with voids enclosed between control gate electrodes |
Yao-Sheng Lee, Jayavel Pachamuthu, Raghuveer S. Makala, George Matamis, Johann Alsmeier |
2016-05-31 |
| 9331181 |
Nanodot enhanced hybrid floating gate for non-volatile memory devices |
Donovan Lee, James Kai, George Samachisa, George Matamis, Vinod R. Purayath |
2016-05-03 |
| 9252151 |
Three dimensional NAND device with birds beak containing floating gates and method of making thereof |
Donovan Lee, Vinod R. Purayath, Yuan Zhang, James Kai, George Matamis |
2016-02-02 |
| 9230974 |
Methods of selective removal of blocking dielectric in NAND memory strings |
Jayavel Pachamuthu, Johann Alsmeier, George Matamis |
2016-01-05 |
| 9230987 |
Multilevel memory stack structure and methods of manufacturing the same |
Jayavel Pachamuthu, Johann Alsmeier |
2016-01-05 |
| 9227456 |
Memories with cylindrical read/write stacks |
Yao-Sheng Lee, George Samachisa, Johann Alsmeier |
2016-01-05 |