| 9530506 |
NAND boosting using dynamic ramping of word line voltages |
Yingda Dong, Masaaki Higashitani |
2016-12-27 |
| 9530790 |
Three-dimensional memory device containing CMOS devices over memory stack structures |
Zhenyu Lu, Andrew Lin, Johann Alsmeier, Wei Zhao, Wenguang Shi +2 more |
2016-12-27 |
| 9515085 |
Vertical memory device with bit line air gap |
Jilin Xia, Jayavel Pachamuthu |
2016-12-06 |
| 9478495 |
Three dimensional memory device containing aluminum source contact via structure and method of making thereof |
Jayavel Pachamuthu, Jilin Xia, Christopher J. Petti |
2016-10-25 |
| 9449980 |
Band gap tailoring for a tunneling dielectric for a three-dimensional memory structure |
— |
2016-09-20 |
| 9449985 |
Memory cell with high-k charge trapping layer |
Jayavel Pachamuthu, Johann Alsmeier, Masaaki Higashitani |
2016-09-20 |
| 9449984 |
Vertical NAND device with low capacitance and silicided word lines |
Johann Alsmeier |
2016-09-20 |
| 9443865 |
Fabricating 3D NAND memory having monolithic crystalline silicon vertical NAND channel |
Jayavel Pachamuthu, Johann Alsmeier, Masaaki Higashitani |
2016-09-13 |
| 9443907 |
Vertical bit line wide band gap TFT decoder |
Masaaki Higashitani |
2016-09-13 |
| 9425299 |
Three-dimensional memory device having a heterostructure quantum well channel |
Jayavel Pachamuthu, Johann Alsmeier, Masaaki Higashitani |
2016-08-23 |
| 9406781 |
Thin film transistor |
Masaaki Higashitani |
2016-08-02 |
| 9368510 |
Method of forming memory cell with high-k charge trapping layer |
Jayavel Pachamuthu, Johann Alsmeier, Masaaki Higashitani |
2016-06-14 |
| 9331093 |
Three dimensional NAND device with silicon germanium heterostructure channel |
Jayavel Pachamuthu |
2016-05-03 |
| 9287290 |
3D memory having crystalline silicon NAND string channel |
Jayavel Pachamuthu, Johann Alsmeier, Masaaki Higashitani |
2016-03-15 |
| 9281317 |
3D non-volatile memory with metal silicide interconnect |
Masaaki Higashitani |
2016-03-08 |
| 9240420 |
3D non-volatile storage with wide band gap transistor decoder |
Masaaki Higashitani |
2016-01-19 |
| 9230980 |
Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device |
Jayavel Pachamuthu, Johann Alsmeier |
2016-01-05 |
| 9230985 |
Vertical TFT with tunnel barrier |
Ming-Che Wu, Tim Chen |
2016-01-05 |