| 9502471 |
Multi tier three-dimensional memory devices including vertically shared bit lines |
Zhenyu Lu, Henry Chien, Johann Alsmeier, Koji Miyata, Tong Zhang +7 more |
2016-11-22 |
| 9484093 |
Controlling adjustable resistance bit lines connected to word line combs |
Perumal Ratnam, Tianhong Yan |
2016-11-01 |
| 9478495 |
Three dimensional memory device containing aluminum source contact via structure and method of making thereof |
Jayavel Pachamuthu, Peter Rabkin, Jilin Xia |
2016-10-25 |
| 9472301 |
Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same |
Abhijit Bandyopadhyay, Tanmay Kumar, Scott Brad Herner, Roy E. Scheuerlein |
2016-10-18 |
| 9472758 |
High endurance non-volatile storage |
Zhida Lan, Abhijit Bandyopadhyay, Li Xiao, Girish Nagavarapu |
2016-10-18 |
| 9455301 |
Setting channel voltages of adjustable resistance bit line structures using dummy word lines |
Perumal Ratnam, Tianhong Yan |
2016-09-27 |
| 9443910 |
Silicided bit line for reversible-resistivity memory |
Kan Fujiwara, Takuya Futase, Toshihiro Iizuka, Shin Kikuchi, Yoichiro Tanaka +1 more |
2016-09-13 |
| 9443590 |
Content addressable memory cells, memory arrays and methods of forming the same |
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2016-09-13 |
| 9373396 |
Side wall bit line structures |
Perumal Ratnam, Tianhong Yan |
2016-06-21 |
| 9369553 |
Mobile electronic device comprising an ultrathin sapphire cover plate |
James M. Zahler |
2016-06-14 |