| 9502102 |
MLC OTP operation with diode behavior in ZnO RRAM devices for 3D memory |
Sung Hyun Jo |
2016-11-22 |
| 9472301 |
Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same |
Abhijit Bandyopadhyay, Scott Brad Herner, Christopher J. Petti, Roy E. Scheuerlein |
2016-10-18 |
| 9373410 |
MLC OTP operation in A-Si RRAM |
— |
2016-06-21 |
| 9343668 |
Low temperature in-situ doped silicon-based conductor material for memory cell |
Steve Maxwell, Sundar Narayanan, Sung Hyun Jo |
2016-05-17 |
| 9336876 |
Soak time programming for two-terminal memory |
Layne Armijo, Sung Hyun Jo |
2016-05-10 |
| 9324942 |
Resistive memory cell with solid state diode |
Hagop Nazarian, Sung Hyun Jo |
2016-04-26 |
| 9245622 |
Pre-conditioning two-terminal memory for increased endurance |
— |
2016-01-26 |