| 9520557 |
Silicon based nanoscale crossbar memory |
Wei Lu, Kuk-Hwan Kim |
2016-12-13 |
| 9520561 |
Controlling on-state current for two-terminal memory |
Kuk-Hwan Kim, Ping-Hung Lu, Chen-Chun Chen |
2016-12-13 |
| 9508425 |
Nanoscale metal oxide resistive switching element |
Wei Lu |
2016-11-29 |
| 9502102 |
MLC OTP operation with diode behavior in ZnO RRAM devices for 3D memory |
Tanmay Kumar |
2016-11-22 |
| 9460788 |
Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor |
Hagop Nazarian |
2016-10-04 |
| 9437297 |
Write and erase scheme for resistive memory device |
Hagop Nazarian |
2016-09-06 |
| 9425237 |
Selector device for two-terminal memory |
— |
2016-08-23 |
| 9406379 |
Resistive random access memory with non-linear current-voltage relationship |
Kuk-Hwan Kim |
2016-08-02 |
| 9401475 |
Method for silver deposition for a non-volatile memory device |
Steven Patrick Maxwell, Scott Brad Herner |
2016-07-26 |
| 9397291 |
RRAM with dual mode operation |
— |
2016-07-19 |
| 9385319 |
Filamentary based non-volatile resistive memory device and method |
Hagop Nazarian |
2016-07-05 |
| 9362499 |
Three dimension programmable resistive random accessed memory array with shared bitline and method |
Harry Yue Gee, Hagop Nazarian, Scott Brad Herner |
2016-06-07 |
| 9343668 |
Low temperature in-situ doped silicon-based conductor material for memory cell |
Steve Maxwell, Sundar Narayanan, Tanmay Kumar |
2016-05-17 |
| 9336876 |
Soak time programming for two-terminal memory |
Tanmay Kumar, Layne Armijo |
2016-05-10 |
| 9324942 |
Resistive memory cell with solid state diode |
Hagop Nazarian, Tanmay Kumar |
2016-04-26 |
| 9269898 |
Low temperature deposition for silicon-based conductive film |
Steven Patrick Maxwell, Kuk-Hwan Kim |
2016-02-23 |
