Issued Patents 2016
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9520557 | Silicon based nanoscale crossbar memory | Wei Lu, Kuk-Hwan Kim | 2016-12-13 |
| 9520561 | Controlling on-state current for two-terminal memory | Kuk-Hwan Kim, Ping-Hung Lu, Chen-Chun Chen | 2016-12-13 |
| 9508425 | Nanoscale metal oxide resistive switching element | Wei Lu | 2016-11-29 |
| 9502102 | MLC OTP operation with diode behavior in ZnO RRAM devices for 3D memory | Tanmay Kumar | 2016-11-22 |
| 9460788 | Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor | Hagop Nazarian | 2016-10-04 |
| 9437297 | Write and erase scheme for resistive memory device | Hagop Nazarian | 2016-09-06 |
| 9425237 | Selector device for two-terminal memory | — | 2016-08-23 |
| 9406379 | Resistive random access memory with non-linear current-voltage relationship | Kuk-Hwan Kim | 2016-08-02 |
| 9401475 | Method for silver deposition for a non-volatile memory device | Steven Patrick Maxwell, Scott Brad Herner | 2016-07-26 |
| 9397291 | RRAM with dual mode operation | — | 2016-07-19 |
| 9385319 | Filamentary based non-volatile resistive memory device and method | Hagop Nazarian | 2016-07-05 |
| 9362499 | Three dimension programmable resistive random accessed memory array with shared bitline and method | Harry Yue Gee, Hagop Nazarian, Scott Brad Herner | 2016-06-07 |
| 9343668 | Low temperature in-situ doped silicon-based conductor material for memory cell | Steve Maxwell, Sundar Narayanan, Tanmay Kumar | 2016-05-17 |
| 9336876 | Soak time programming for two-terminal memory | Tanmay Kumar, Layne Armijo | 2016-05-10 |
| 9324942 | Resistive memory cell with solid state diode | Hagop Nazarian, Tanmay Kumar | 2016-04-26 |
| 9269898 | Low temperature deposition for silicon-based conductive film | Steven Patrick Maxwell, Kuk-Hwan Kim | 2016-02-23 |