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Atomic layer epitaxy for semiconductor gate stack layer for advanced channel devices |
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Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing |
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Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films |
Fareen Adeni Khaja, Errol Antonio C. Sanchez, Patrick M. Martin |
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Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films |
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| 9230837 |
Multizone control of lamps in a conical lamphead using pyrometers |
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2016-01-05 |
