| 9530888 |
MOCVD growth of highly mismatched III-V CMOS channel materials on silicon substrates |
Keun-Yong Ban, Zhiyuan Ye, Xinyu BAO, David K. Carlson |
2016-12-27 |
| 9512520 |
Semiconductor substrate processing system |
David K. Carlson, Satheesh Kuppurao |
2016-12-06 |
| 9476144 |
Method and apparatus for the selective deposition of epitaxial germanium stressor alloys |
David K. Carlson |
2016-10-25 |
| 9406507 |
Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films |
Swaminathan Srinivasan, Fareen Adeni Khaja, Patrick M. Martin |
2016-08-02 |
| 9373502 |
Structure for III-V devices on silicon |
Xinyu BAO |
2016-06-21 |
| 9347696 |
Compact ampoule thermal management system |
David K. Carlson, Kenric Choi, Marcel E. Josephson, Dennis L. Demars |
2016-05-24 |
| 9299560 |
Methods for depositing group III-V layers on substrates |
Yi-Chiau Huang, Xinyu BAO |
2016-03-29 |
| 9293523 |
Method of forming III-V channel |
Xinyu BAO |
2016-03-22 |
| 9279604 |
Compact ampoule thermal management system |
David K. Carlson, Kenric Choi, Marcel E. Josephson, Dennis L. Demars, Emre Cuvalci +1 more |
2016-03-08 |
