| 9472412 |
Procedure for etch rate consistency |
Hanshen Zhang |
2016-10-18 |
| 9449845 |
Selective titanium nitride etching |
Jie Liu, Anchuan Wang, Nitin K. Ingle, Seung Ho Park, Zhijun Chen +1 more |
2016-09-20 |
| 9437451 |
Radical-component oxide etch |
Zhijun Chen, Ching-Mei Hsu, Seung Ho Park, Anchuan Wang, Nitin K. Ingle |
2016-09-06 |
| 9418858 |
Selective etch of silicon by way of metastable hydrogen termination |
Anchuan Wang, Nitin K. Ingle, Young S. Lee |
2016-08-16 |
| 9390937 |
Silicon-carbon-nitride selective etch |
Zhijun Chen, Anchuan Wang, Nitin K. Ingle |
2016-07-12 |
| 9343327 |
Methods for etch of sin films |
Anchuan Wang, Nitin K. Ingle |
2016-05-17 |
| 9324576 |
Selective etch for silicon films |
Anchuan Wang, Nitin K. Ingle |
2016-04-26 |
| 9245762 |
Procedure for etch rate consistency |
Hanshen Zhang |
2016-01-26 |
| 9236266 |
Dry-etch for silicon-and-carbon-containing films |
Anchuan Wang, Nitin K. Ingle, Yunyu Wang, Young S. Lee |
2016-01-12 |
