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Hongwen Yan

IBM: 2 patents #845 of 5,214Top 20%
Infineon Technologies Ag: 1 patents #412 of 1,152Top 40%
📍 Somers, NY: #5 of 28 inventorsTop 20%
🗺 New York: #1,066 of 8,003 inventorsTop 15%
Overall (2005): #53,010 of 245,428Top 25%
2
Patents 2005

Issued Patents 2005

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
6908806 Gate metal recess for oxidation protection and parasitic capacitance reduction Haining Yang, Ramachandra Divakaruni, Oleg Gluschenkov, Rajeev Malik, Ravikumar Ramachandran 2005-06-21
6838347 Method for reducing line edge roughness of oxide material using chemical oxide removal Joyce C. Liu, Wesley C. Natzle, Richard S. Wise, Bidan Zhang 2005-01-04