Issued Patents 2005
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6974983 | Isolated FinFET P-channel/N-channel transistor pair | Wiley Eugene Hill, Haihong Wang, Bin Yu | 2005-12-13 |
| 6967175 | Damascene gate semiconductor processing with local thinning of channel region | Haihong Wang, Bin Yu | 2005-11-22 |
| 6960804 | Semiconductor device having a gate structure surrounding a fin | Chih-Yuh Yang, Judy Xilin An, Srikanteswara Dakshina-Murthy, Bin Yu | 2005-11-01 |
| 6958512 | Non-volatile memory device | Yider Wu, Haihong Wang, Bin Yu | 2005-10-25 |
| 6936882 | Selective silicidation of gates in semiconductor devices to achieve multiple threshold voltages | Haihong Wang, Bin Yu | 2005-08-30 |
| 6914277 | Merged FinFET P-channel/N-channel pair | Wiley Eugene Hill, Haihong Wang, Bin Yu | 2005-07-05 |
| 6894337 | System and method for forming stacked fin structure using metal-induced-crystallization | Haihong Wang, Bin Yu | 2005-05-17 |
| 6876042 | Additional gate control for a double-gate MOSFET | Bin Yu, Haihong Wang | 2005-04-05 |
| 6855607 | Multi-step chemical mechanical polishing of a gate area in a FinFET | Krishnashree Achuthan, Haihong Wang, Bin Yu | 2005-02-15 |
| 6855989 | Damascene finfet gate with selective metal interdiffusion | Haihong Wang, Ming-Ren Lin, Bin Yu | 2005-02-15 |