Issued Patents 2004
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6815802 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan +4 more | 2004-11-09 |
| 6805962 | Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications | Stephen W. Bedell, Keith E. Fogel, Steven J. Koester, Devendra K. Sadana, John A. Ott | 2004-10-19 |
| 6784466 | Si/SiGe optoelectronic integrated circuits | Khalid EzzEldin Ismail, Steven J. Koester, Bernd-Ulrich Klepser | 2004-08-31 |
| 6780735 | Method to increase carbon and boron doping concentrations in Si and SiGe films | Basanth Jagannathan, Ryan Wuthrich, Byeongju Park | 2004-08-24 |
| 6774010 | Transferable device-containing layer for silicon-on-insulator applications | Alfred Grill, Dean A. Herman, Jr., Katherine L. Saenger | 2004-08-10 |
| 6750119 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Basanth Jagannathan, Alfred Grill, Bernard S. Meyerson, John A. Ott | 2004-06-15 |
| 6743651 | Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen | Feng-Yi Huang, Steven J. Koester, Devendra K. Sadana | 2004-06-01 |
| 6723621 | Abrupt delta-like doping in Si and SiGe films by UHV-CVD | Frank Cardone, Khalid EzzEldin Ismail | 2004-04-20 |
| 6709903 | Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing | Silke Christiansen, Alfred Grill, Patricia M. Mooney | 2004-03-23 |
| 6690072 | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device | Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Guy M. Cohen, Steven J. Koester +2 more | 2004-02-10 |