Issued Patents 2004
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6831369 | Semiconductor structure having in-situ formed unit resistors and method for fabrication | Lawrence A. Clevenger, Louis L. Hsu, Keith Kwong Hon Wong | 2004-12-14 |
| 6828232 | Semiconductor structure having in-situ formed unit resistors and method for fabrication | Lawrence A. Clevenger, Louis L. Hsu, Keith Kwong Hon Wong | 2004-12-07 |
| 6809030 | Method and structure for controlling the interface roughness of cobalt disilicide | Paul D. Agnello, Roy A. Carruthers, James M. E. Harper, Christian Lavoie, Kirk D. Peterson +4 more | 2004-10-26 |
| 6794226 | Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication | Lawrence A. Clevenger, Louis L. Hsu, Keith Kwong Hon Wong | 2004-09-21 |
| 6777298 | Elevated source drain disposable spacer CMOS | Ronnen Andrew Roy, Christian Lavoie, Kam-Leung Lee | 2004-08-17 |
| 6773982 | Feram cell with internal oxygen source and method of oxygen release | Charles T. Black, Alfred Grill, Deborah A. Neumayer, Wilbur D. Pricer, Katherine L. Saenger +1 more | 2004-08-10 |
| 6753606 | Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy | Roy A. Carruthers, James M. E. Harper, Christian Lavoie, Ronnen Andrew Roy, Yun-Yu Wang | 2004-06-22 |
| 6716708 | Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby | Kevin K. Chan, Guy M. Cohen, Kathryn Guarini, Christian Lavoie, Ronnen Andrew Roy +1 more | 2004-04-06 |
| 6707097 | Method for forming refractory metal-silicon-nitrogen capacitors and structures formed | Lawrence A. Clevenger, Louis L. Hsu, Keith Kwong Hon Wong | 2004-03-16 |
| 6700203 | Semiconductor structure having in-situ formed unit resistors | Lawrence A. Clevenger, Louis L. Hsu, Keith Kwong Hon Wong | 2004-03-02 |
| 6690072 | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device | Roy A. Carruthers, Kevin K. Chan, Jack O. Chu, Guy M. Cohen, Steven J. Koester +2 more | 2004-02-10 |