Issued Patents 2004
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6809030 | Method and structure for controlling the interface roughness of cobalt disilicide | Paul D. Agnello, Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Christian Lavoie +4 more | 2004-10-26 |
| 6777298 | Elevated source drain disposable spacer CMOS | Cyril Cabral, Jr., Christian Lavoie, Kam-Leung Lee | 2004-08-17 |
| 6753606 | Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy | Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Christian Lavoie, Yun-Yu Wang | 2004-06-22 |
| 6727135 | All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS | Kam-Leung Lee | 2004-04-27 |
| 6716708 | Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby | Cyril Cabral, Jr., Kevin K. Chan, Guy M. Cohen, Kathryn Guarini, Christian Lavoie +1 more | 2004-04-06 |
| 6690072 | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device | Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Jack O. Chu, Guy M. Cohen +2 more | 2004-02-10 |