DE

David R. Evans

SA Sharp Laboratories Of America: 15 patents #3 of 72Top 5%
📍 Beaverton, OR: #3 of 309 inventorsTop 1%
🗺 Oregon: #7 of 2,269 inventorsTop 1%
Overall (2003): #556 of 273,478Top 1%
15
Patents 2003

Issued Patents 2003

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
6669870 Substituted phenylethylene precursor synthesis method Wei-Wei Zhuang, Tue Nguyen, Lawrence J. Charneski, Sheng Teng Hsu 2003-12-30
6660628 Method of MOCVD Ti-based barrier metal thin films with tetrakis (methylethylamino) titanium with octane Wei Pan, Wei-Wei Zhuang, Sheng Teng Hsu 2003-12-09
6632731 Structure and method of making a sub-micron MOS transistor Yanjun Ma, Yoshi Ono, Sheng Teng Hsu 2003-10-14
6627510 Method of making self-aligned shallow trench isolation Sheng Teng Hsu, Bruce D. Ulrich, Douglas J. Tweet, Lisa Stecker 2003-09-30
6620664 Silicon-germanium MOSFET with deposited gate dielectric and metal gate electrode and method for making the same Yanjun Ma, Douglas J. Tweet 2003-09-16
6596344 Method of depositing a high-adhesive copper thin film on a metal nitride substrate Wei-Wei Zhuang, Lawrence J. Charneski, Sheng Teng Hsu 2003-07-22
6586344 Precursors for zirconium and hafnium oxide thin film deposition Wei-Wei Zhuang 2003-07-01
6579793 Method of achieving high adhesion of CVD copper thin films on TaN Substrates Wei-Wei Zhuang, Wei Pan, Sheng Teng Hsu 2003-06-17
6576292 Method of forming highly adhesive copper thin films on metal nitride substrates via CVD Wei-Wei Zhuang, Sheng Teng Hsu 2003-06-10
6576293 Method to improve copper thin film adhesion to metal nitride substrates by the addition of water Wei-Wei Zhuang, Sheng Teng Hsu 2003-06-10
6573134 Dual metal gate CMOS devices and method for making the same Yanjun Ma, Yoshi Ono, Sheng Teng Hsu 2003-06-03
6555916 Integrated circuit prepared by selectively cleaning copper substrates, in-situ, to remove copper oxides Tue Nguyen, Lawrence J. Charneski, Sheng Teng Hsu 2003-04-29
6509268 Thermal densification in the early stages of copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics Wei Pan, Sheng Teng Hsu 2003-01-21
6509260 Method of shallow trench isolation using a single mask Sheng Teng Hsu 2003-01-21
6506643 Method for forming a damascene FeRAM cell structure Sheng Teng Hsu 2003-01-14