TB

Thomas H. Baum

AC Advanced Technology & Materials Co.: 10 patents #1 of 81Top 2%
📍 New Fairfield, CT: #1 of 25 inventorsTop 4%
🗺 Connecticut: #8 of 2,845 inventorsTop 1%
Overall (2003): #1,492 of 273,478Top 1%
10
Patents 2003

Issued Patents 2003

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
6660331 MOCVD of SBT using toluene-based solvent system for precursor delivery Bryan C. Hendrix, Debra Desrochers Christos, Jeffrey F. Roeder 2003-12-09
6639080 Pyrazolate copper complexes, and MOCVD of copper using same Chongying Xu, Ziyun Wang 2003-10-28
6623656 Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same Chongying Xu, Witold Paw, Bryan C. Hendrix, Jeffrey F. Roeder, Ziyun Wang 2003-09-23
6602549 Indium source reagent composition, and use thereof for deposition of indium-containing films on subtrates and ion implantation of indium-doped shallow junction microelectronic structures Chongying Xu 2003-08-05
6596236 Micro-machined thin film sensor arrays for the detection of H2 containing gases, and method of making and using the same Frank Dimeo, Jr. 2003-07-22
6589329 Composition and process for production of copper circuitry in microelectronic device structures Chongying Xu 2003-07-08
6559328 Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronic structures Chongying Xu 2003-05-06
6527819 Polishing slurries for copper and associated materials William A. Wojtczak, Long Nguyen, Cary Regulski 2003-03-04
6511706 MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery Bryan C. Hendrix, Debra A. Desrochers-Christos, Jeffrey F. Roeder, Witold Paw 2003-01-28
6504015 Tetrahydrofuran-adducted group II &bgr;-diketonate complexes as source reagents for chemical vapor deposition Witold Paw 2003-01-07