PS

Philip Swab

US Unity Semiconductor: 13 patents #15 of 55Top 30%
HL Hefei Reliance Memory Limited: 7 patents #7 of 28Top 25%
NS N V Bekaert Sa: 1 patents #84 of 190Top 45%
RA Rambus: 1 patents #410 of 549Top 75%
Overall (All Time): #193,263 of 4,157,543Top 5%
22
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11672189 Two-terminal reversibly switchable memory device Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more 2023-06-06
11502249 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more 2022-11-15
11063214 Two-terminal reversibly switchable memory device Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more 2021-07-13
10833125 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more 2020-11-10
10680171 Two-terminal reversibly switchable memory device Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more 2020-06-09
10340312 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more 2019-07-02
10224480 Two-terminal reversibly switchable memory device Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more 2019-03-05
9831425 Two-terminal reversibly switchable memory device Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more 2017-11-28
9806130 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more 2017-10-31
9570165 1D-2R memory architecture Deepak C. Sekar, Gary B. Bronner, Christophe J. Chevallier, Lidia Vereen, Elizabeth Friend +1 more 2017-02-14
9570515 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more 2017-02-14
9159408 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more 2015-10-13
9159913 Two-terminal reversibly switchable memory device Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, John Sanchez +2 more 2015-10-13
8675389 Memory element with a reactive metal layer Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor, Darrell Rinerson +2 more 2014-03-18
8611130 Method for fabricating multi-resistive state memory devices Darrell Rinerson, Christophe J. Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven W. Longcor +2 more 2013-12-17
8062942 Method for fabricating multi-resistive state memory devices Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more 2011-11-22
7889539 Multi-resistive state memory device with conductive oxide electrodes Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more 2011-02-15
7633790 Multi-resistive state memory device with conductive oxide electrodes Darrel Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more 2009-12-15
7394679 Multi-resistive state element with reactive metal Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more 2008-07-01
7082052 Multi-resistive state element with reactive metal Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor +2 more 2006-07-25
6972985 Memory element having islands Darrell Rinerson, Christophe J. Chevallier, Steve Kuo-Ren Hsia, John Sanchez, Steven W. Longcor 2005-12-06
6486597 Electrically tunable low secondary electron emission diamond-like coatings and process for depositing coatings Arvind Goel, Craig Anthony Outten, Chandra Venkatraman 2002-11-26