Issued Patents All Time
Showing 26–50 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9590081 | Method of making a graphene base transistor with reduced collector area | Francis J. Kub, Andrew D. Koehler | 2017-03-07 |
| 9543168 | Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions | Boris N. Feigelson, Jordan D. Greenlee, Francis J. Kub | 2017-01-10 |
| 9490356 | Growth of high-performance III-nitride transistor passivation layer for GaN electronics | Andrew D. Koehler, Karl D. Hobart, Francis J. Kub | 2016-11-08 |
| 9466684 | Transistor with diamond gate | Andrew D. Koehler, Marko J. Tadjer, Karl D. Hobart, Tatyana I. Feygelson | 2016-10-11 |
| 9327982 | Method of forming graphene on a surface | Francis J. Kub, Boris N. Feygelson | 2016-05-03 |
| 9331163 | Transistor with diamond gate | Andrew D. Koehler, Marko J. Tadjer, Tatyana I. Feygelson, Karl D. Hobart | 2016-05-03 |
| 9305858 | Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates | Karl D. Hobart, Marko J. Tadjer, Tatyana I. Feygelson, Bradford B. Pate | 2016-04-05 |
| 9275998 | Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel | Francis J. Kub, Andrew D. Koehler, Karl D. Hobart | 2016-03-01 |
| 9246305 | Light-emitting devices with integrated diamond | Francis J. Kub, Karl D. Hobart | 2016-01-26 |
| 9236432 | Graphene base transistor with reduced collector area | Francis J. Kub, Andrew D. Koehler | 2016-01-12 |
| 9196703 | Selective deposition of diamond in thermal vias | Karl D. Hobart, Tatyana I. Feygelson, Eugene I. Imhoff, Joshua D. Caldwell, Andrew D. Koehler +8 more | 2015-11-24 |
| 9196614 | Inverted III-nitride P-channel field effect transistor with hole carriers in the channel | Francis J. Kub, Andrew D. Koehler, Karl D. Hobart | 2015-11-24 |
| 9159641 | Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates | Karl D. Hobart, Marko J. Tadjer, Tatyana I. Feygelson, Bradford B. Pate | 2015-10-13 |
| 9111786 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Francis J. Kub, Michael A. Mastro, Charles R. Eddy, Jr., Jennifer K. Hite | 2015-08-18 |
| 9102046 | Hand tool impacting device with floating pin mechanism | Christopher Andrew Mattson, Jake Allred, Jeremy S. Alsup, David Christensen, Jacob Morrise +1 more | 2015-08-11 |
| 9105499 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Francis J. Kub, Michael A. Mastro, Charles R. Eddy, Jr., Jennifer K. Hite | 2015-08-11 |
| 9029833 | Graphene on semiconductor detector | Francis J. Kub, Karl D. Hobart | 2015-05-12 |
| 9018056 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Francis J. Kub, Michael A. Mastro, Charles R. Eddy, Jr., Jennifer K. Hite | 2015-04-28 |
| 9006791 | III-nitride P-channel field effect transistor with hole carriers in the channel | Francis J. Kub, Andrew D. Koehler, Karl D. Hobart | 2015-04-14 |
| 8900939 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Karl D. Hobart, Michael A. Mastro, Charles R. Eddy, Jr. | 2014-12-02 |
| 8872159 | Graphene on semiconductor detector | Francis J. Kub, Karl D. Hobart | 2014-10-28 |
| 8753468 | Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates | Joshua D. Caldwell, Karl D. Hobart, Francis J. Kub | 2014-06-17 |
| 8647918 | Formation of graphene on a surface | Francis J. Kub, Boris N. Feygelson | 2014-02-11 |
| 8648390 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Karl D. Hobart, Charles R. Eddy, Jr., Michael A. Mastro | 2014-02-11 |
| 8518808 | Defects annealing and impurities activation in III-nitride compound | Boris N. Feigelson, Francis J. Kub | 2013-08-27 |