Issued Patents All Time
Showing 26–50 of 97 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9490356 | Growth of high-performance III-nitride transistor passivation layer for GaN electronics | Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart | 2016-11-08 |
| 9396941 | Method for vertical and lateral control of III-N polarity | Jennifer K. Hite, Charles R. Eddy, Jr., Nelson Garces | 2016-07-19 |
| 9327982 | Method of forming graphene on a surface | Travis J. Anderson, Boris N. Feygelson | 2016-05-03 |
| 9275998 | Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel | Travis J. Anderson, Andrew D. Koehler, Karl D. Hobart | 2016-03-01 |
| 9246305 | Light-emitting devices with integrated diamond | Travis J. Anderson, Karl D. Hobart | 2016-01-26 |
| 9236432 | Graphene base transistor with reduced collector area | Travis J. Anderson, Andrew D. Koehler | 2016-01-12 |
| 9196614 | Inverted III-nitride P-channel field effect transistor with hole carriers in the channel | Travis J. Anderson, Andrew D. Koehler, Karl D. Hobart | 2015-11-24 |
| 9184266 | Transistor having graphene base | — | 2015-11-10 |
| 9117736 | Diamond and diamond composite material | Charles R. Eddy, Jr., Boris N. Feygelson, Scooter Johnson | 2015-08-25 |
| 9111786 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, Jr., Jennifer K. Hite | 2015-08-18 |
| 9105499 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, Jr., Jennifer K. Hite | 2015-08-11 |
| 9099375 | Diamond and diamond composite material | Charles R. Eddy, Jr., Boris N. Feygelson, Scooter Johnson | 2015-08-04 |
| 9065246 | Infrared laser | Marc Currie | 2015-06-23 |
| 9059565 | Ring cavity laser device | Marc Currie | 2015-06-16 |
| 9029833 | Graphene on semiconductor detector | Karl D. Hobart, Travis J. Anderson | 2015-05-12 |
| 9018056 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, Jr., Jennifer K. Hite | 2015-04-28 |
| 9014221 | Infrared laser | Marc Currie | 2015-04-21 |
| 9006791 | III-nitride P-channel field effect transistor with hole carriers in the channel | Travis J. Anderson, Andrew D. Koehler, Karl D. Hobart | 2015-04-14 |
| 8999060 | Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature | Boris N. Feigelson, Jennifer K. Hite, Charles R. Eddy, Jr. | 2015-04-07 |
| 8900939 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Travis J. Anderson, Karl D. Hobart, Michael A. Mastro, Charles R. Eddy, Jr. | 2014-12-02 |
| 8901536 | Transistor having graphene base | — | 2014-12-02 |
| 8885676 | Infrared laser | Marc Currie | 2014-11-11 |
| 8872159 | Graphene on semiconductor detector | Travis J. Anderson, Karl D. Hobart | 2014-10-28 |
| 8753468 | Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates | Joshua D. Caldwell, Karl D. Hobart, Travis J. Anderson | 2014-06-17 |
| 8723218 | Silicon carbide rectifier | Karl D. Hobart, Mario Ancona, Eugene A. Imhoff | 2014-05-13 |