| 12328898 |
High voltage semiconductor device including buried oxide layer |
Sheng-Yao Huang, Zen-Jay Tsai, Yu-Hsiang Lin |
2025-06-10 |
|
| 12268098 |
Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region |
Chung-Liang Chu, Jian-Cheng Chen, Yu-Ping Wang |
2025-04-01 |
|
| 12262555 |
Semiconductor device and method of fabricating the same |
Jia-He Lin, Yu-Hsiang Lin |
2025-03-25 |
|
| 12243839 |
Bonded semiconductor structure utilizing concave/convex profile design for bonding pads |
Chung-Sung Chiang, Chia-Wei Liu, Yu-Hsiang Lin |
2025-03-04 |
|
| 12087666 |
Semiconductor device |
Chung-Liang Chu |
2024-09-10 |
$618,000 |
| 12040396 |
High voltage semiconductor device including buried oxide layer |
Sheng-Yao Huang, Zen-Jay Tsai, Yu-Hsiang Lin |
2024-07-16 |
$351,000 |
| 11935854 |
Method for forming bonded semiconductor structure utilizing concave/convex profile design for bonding pads |
Chung-Sung Chiang, Chia-Wei Liu, Yu-Hsiang Lin |
2024-03-19 |
$1,311,000 |
| 11877520 |
Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region |
Chung-Liang Chu, Jian-Cheng Chen, Yu-Ping Wang |
2024-01-16 |
$1,009,000 |
| 11869953 |
High voltage transistor device and method for fabricating the same |
Sheng-Yao Huang, Zen-Jay Tsai, Yu-Hsiang Lin |
2024-01-09 |
$1,231,000 |
| 11721702 |
Fabrication method of fin transistor |
Sheng-Yao Huang, Chung-Liang Chu, Zen-Jay Tsai, Yu-Hsiang Lin |
2023-08-08 |
$567,000 |
| 11640949 |
Bonded semiconductor structure utilizing concave/convex profile design for bonding pads |
Chung-Sung Chiang, Chia-Wei Liu, Yu-Hsiang Lin |
2023-05-02 |
$2,175,000 |
| 11626515 |
High voltage semiconductor device including buried oxide layer and method for forming the same |
Sheng-Yao Huang, Zen-Jay Tsai, Yu-Hsiang Lin |
2023-04-11 |
$4,429,000 |
| 11611035 |
Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region |
Chung-Liang Chu, Jian-Cheng Chen, Yu-Ping Wang |
2023-03-21 |
$1,904,000 |
| 11552001 |
Semiconductor device |
Chung-Liang Chu |
2023-01-10 |
$1,182,000 |
| 11476343 |
High voltage transistor device and method for fabricating the same |
Sheng-Yao Huang, Zen-Jay Tsai, Yu-Hsiang Lin |
2022-10-18 |
$632,000 |
| 11417685 |
Fin transistor structure and fabrication method thereof |
Sheng-Yao Huang, Chung-Liang Chu, Zen-Jay Tsai, Yu-Hsiang Lin |
2022-08-16 |
$809,000 |
| 10971676 |
Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region |
Chung-Liang Chu, Jian-Cheng Chen, Yu-Ping Wang |
2021-04-06 |
$1,737,000 |
| 10930839 |
Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region |
Chung-Liang Chu, Jian-Cheng Chen, Yu-Ping Wang |
2021-02-23 |
$3,401,000 |
| 10903143 |
Semiconductor device |
Chung-Liang Chu |
2021-01-26 |
$1,644,000 |
| 10854592 |
Dummy cell arrangement and method of arranging dummy cells |
Chung-Liang Chu, Yu-Hsiang Lin |
2020-12-01 |
$1,757,000 |
| 10714466 |
Layout pattern for magnetoresistive random access memory |
Chung-Liang Chu, Chih-Hsien Tang, Ya-Huei Tsai, Rai-Min Huang, Chueh-Fei Tai |
2020-07-14 |
$342,000 |
| 10658241 |
Method of fabricating integrated circuit |
Chung-Liang Chu, Yu-Hsiang Lin |
2020-05-19 |
$170,000 |
| 10566520 |
Magnetoresistive random access memory |
Chung-Liang Chu, Jian-Cheng Chen, Yu-Ping Wang |
2020-02-18 |
$205,000 |
| 10374006 |
Magnetic random access memory cell structure |
Chung-Liang Chu, Yu-Ping Wang |
2019-08-06 |
$147,000 |
| 10355048 |
Isolation structure of semiconductor device and method for fabricating the same |
Chung-Liang Chu, Hung-Yueh Chen, Yu-Ping Wang |
2019-07-16 |
$335,000 |