Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High voltage semiconductor device including buried oxide layer

High voltage semiconductor device including buried oxide layer

US Patent 12328898 · Granted Jun 10, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Decoding parameter updating method, memory storage device, and memory control ci2025
Decoding method based on replacement data with reduced data amount, memory stora2025
Manufacturing method of semiconductor device including gate oxide layer2025
Touch detection circuitry, electronic device and touch event handling method the2025
Processor control method and associated system-on-chip2025
Semiconductor device and method for fabricating the same2025
Magnetoresistive random access memory having a ring of magnetic tunneling juncti2025
Method for integrating high-voltage (HV) device, medium-voltage (MV) device, and2025
Semiconductor device and method of fabricating the same2025
Semiconductor device and method of fabricating the same2025
Bonded semiconductor structure utilizing concave/convex profile design for bondi2025
Bonded semiconductor structure utilizing concave/convex profile design for bondi2025