Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication method of fin transistor

Fabrication method of fin transistor

US Patent 11721702 · Granted Aug 8, 2023

Estimated economic value: $567,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Decoding parameter updating method, memory storage device, and memory control ci2025
Decoding method based on replacement data with reduced data amount, memory stora2025
Manufacturing method of semiconductor device including gate oxide layer2025
Touch detection circuitry, electronic device and touch event handling method the2025
High voltage semiconductor device including buried oxide layer2025
High voltage semiconductor device including buried oxide layer2025
High voltage semiconductor device including buried oxide layer2025
High voltage semiconductor device including buried oxide layer2025
Processor control method and associated system-on-chip2025
Semiconductor device and method for fabricating the same2025
Magnetoresistive random access memory having a ring of magnetic tunneling juncti2025
Magnetoresistive random access memory having a ring of magnetic tunneling juncti2025