Chen-Chung Hsu has been granted 99 US patents while listed as an inventor at United Microelectronics . The first was granted in 1995 and the most recent in March 2013. Chen-Chung Hsu ranks #14,805 of 4,157,543 US inventors in our database (top 0.36%). Patent records list Chen-Chung Hsu in Taichung, TW.
Patents per Year Patents granted per year, 1995 to 2013 Bar chart with a peak of 22 patents in 2000. peak 22 1995: 8 patents 1995 1996: 14 patents 1996 1997: 11 patents 1997 1998: 14 patents 1998 1999: 17 patents 1999 2000: 22 patents 2000 2001: 9 patents 2001 2002: 2 patents 2002 2003: 1 patents 2003 2013: 1 patents 2013
Issued Patents All Time
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Showing 1–25 of 99 patents
Patent # Title Co-Inventors Date Approx Value ⓘ
8389872 Electrode structure adapted for high applied voltage and fabrication method thereof Chih-Ming Hu , Chun-Yen Lin , Wen-Sheng Lin , Shih-Chieh Jang 2013-03-05
6504216 Electrostatic discharge protective circuit Tien-Hao Tang 2003-01-07
$1,598,000
6477023 Electrostatic discharge protection apparatus Tien-Hao Tang , Shiao-Shien Chen 2002-11-05
$1,301,000
6346441 Method of fabricating flash memory cell using two tilt implantation steps — 2002-02-12
$2,174,000
6319850 Method of forming dielectric layer with low dielectric constant Yih-Jau Chang 2001-11-20
$781,000
6274468 Method of manufacturing borderless contact — 2001-08-14
$1,143,000
6236073 Electrostatic discharge device — 2001-05-22
$1,230,000
6225166 Method of manufacturing electrostatic discharge protective circuit Yih-Jau Chang 2001-05-01
$1,830,000
6211014 Three-dimensional, deep-trench, high-density read-only memory (ROM) and its manufacturing method — 2001-04-03
$1,066,000
6180516 Method of fabricating a dual damascene structure — 2001-01-30
$2,214,000
6174804 Dual damascene manufacturing process — 2001-01-16
$2,314,000
6171954 Method of manufacturing self-aligned contact — 2001-01-09
$1,232,000
6171968 Method of forming damascene structure having borderless via design — 2001-01-09
$1,232,000
6165901 Method of fabricating self-aligned contact — 2000-12-26
$1,095,000
6165831 Method of fabricating a buried contact in a static random access memory — 2000-12-26
$1,095,000
6153913 Electrostatic discharge protection circuit Sheng-Hsing Yang 2000-11-28
$1,080,000
6153498 Method of fabricating a buried contact — 2000-11-28
$1,080,000
6150261 Method of fabricating semiconductor device for preventing antenna effect Yih-Jau Chang 2000-11-21
$1,003,000
6146980 Method for manufacturing silicon substrate having gettering capability — 2000-11-14
$1,549,000
6140681 Electrostatic discharge protection circuit — 2000-10-31
$1,489,000
6114194 Method for fabricating a field device transistor — 2000-09-05
6114226 Method of manufacturing electrostatic discharge protective circuit Yih-Jau Chang 2000-09-05
6100141 Method for forming electrostatic discharge (ESD) protection circuit — 2000-08-08
6097235 Field device electrostatic discharge protective circuit Tien-Hao Tang 2000-08-01
6096633 Dual damascene process for forming local interconnect — 2000-08-01