{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method of fabricating a buried contact in a static random access memory", "item": "https://www.patentleaderboard.com/patent/6165831"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating a buried contact in a static random access memory

Method of fabricating a buried contact in a static random access memory

US Patent 6165831 · Granted Dec 26, 2000

Estimated economic value: $1,095,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrode structure adapted for high applied voltage and fabrication method ther2013
Electrostatic discharge protective circuit2003
Electrostatic discharge protection apparatus2002
Method of fabricating flash memory cell using two tilt implantation steps2002
Method of forming dielectric layer with low dielectric constant2001
Method of manufacturing borderless contact2001
Electrostatic discharge device2001
Method of manufacturing electrostatic discharge protective circuit2001
Three-dimensional, deep-trench, high-density read-only memory (ROM) and its manu2001
Method of fabricating a dual damascene structure2001
Dual damascene manufacturing process2001
Method of manufacturing self-aligned contact2001