| 6882002 |
Non-volatile semiconductor memory device having a dielectric layer formed around and planar with a first stack's top surface |
— |
2005-04-19 |
| 6828219 |
Stacked spacer structure and process |
Shih-Hsien Yang, Yueh-Cheng Chuang |
2004-12-07 |
| 6776622 |
Conductive contact structure and process for producing the same |
Shih-Hsien Yang, Yueh-Cheng Chuang |
2004-08-17 |
| 6764863 |
Memory-storage node and the method of fabricating the same |
Ming-Chung Chiang, Chung-Ming Chu, Min-Chieh Yang |
2004-07-20 |
| 6762482 |
Memory device with composite contact plug and method for manufacturing the same |
Wen-Chung Liu, Yoshiaki Fukuzumi |
2004-07-13 |
| 6563161 |
Memory-storage node and the method of fabricating the same |
Ming-Chung Chiang, Chung-Ming Chu, Min-Chieh Yang |
2003-05-13 |
| 6352896 |
Method of manufacturing DRAM capacitor |
Haochieh Liu, Hsi-Chuan Chen, Jung-Ho Chang, Hong-Hsiang Tsai, Li-Ming Wang +2 more |
2002-03-05 |
| 6291355 |
Method of fabricating a self-aligned contact opening |
Haochieh Liu, Hsi-Chuan Chen, Sen-Huan Huang |
2001-09-18 |
| 6248643 |
Method of fabricating a self-aligned contact |
Chien-Sheng Hsieh, Wei-Ray Lin, Fu-Liang Yang, Erik S. Jeng |
2001-06-19 |