JC

Jung-Ho Chang

VS Vanguard International Semiconductor: 11 patents #52 of 585Top 9%
UM United Microelectronics: 3 patents #1,523 of 4,560Top 35%
Samsung: 1 patents #49,284 of 75,807Top 70%
📍 Seoul, KR: #3,670 of 39,741 inventorsTop 10%
Overall (All Time): #283,702 of 4,157,543Top 7%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
12254245 Method of processing digitalized drawing data and computer program Dong Yong Oh, John G Roby, Sang Do Kim 2025-03-18
11251273 Non-volatile memory device and method for manufacturing the same Jian-Ting Chen, Yao-Ting Tsai, Hsiu-Han Liao 2022-02-15
10971508 Integrated circuit and method of manufacturing the same Yao-Ting Tsai, Che-Fu Chuang, Hsiu-Han Liao 2021-04-06
6352896 Method of manufacturing DRAM capacitor Haochieh Liu, Hsi-Chuan Chen, Hong-Hsiang Tsai, Li-Ming Wang, Sen-Huan Huang +2 more 2002-03-05
6194265 Process for integrating hemispherical grain silicon and a nitride-oxide capacitor dielectric layer for a dynamic random access memory capacitor structure Hsi-Chuan Chen, Dahcheng Lin 2001-02-27
6165830 Method to decrease capacitance depletion, for a DRAM capacitor, via selective deposition of a doped polysilicon layer on a selectively formed hemispherical grain silicon layer Dahcheng Lin, Hsi-Chuan Chen 2000-12-26
6130146 In-situ nitride and oxynitride deposition process in the same chamber Hsi-Chuan Chen, Dahcheng Lin 2000-10-10
6127221 In situ, one step, formation of selective hemispherical grain silicon layer, and a nitride-oxide dielectric capacitor layer, for a DRAM application Dahcheng Lin, Hsi-Chuan Chen 2000-10-03
6074931 Process for recess-free planarization of shallow trench isolation Hsi-Chuan Chen, Dahcheng Lin 2000-06-13
6046083 Growth enhancement of hemispherical grain silicon on a doped polysilicon storage node capacitor structure, for dynamic random access memory applications Dahcheng Lin, Hsi-Chuan Chen, Kuo-Shu Tseng 2000-04-04
6037238 Process to reduce defect formation occurring during shallow trench isolation formation Hsi-Chuan Chen, Dahcheng Lin 2000-03-14
6037219 One step in situ doped amorphous silicon layers used for selective hemispherical grain silicon formation for crown shaped capacitor applications Dahcheng Lin, Hsi-Chuan Chen, Kuo-Shu Tseng 2000-03-14
5930625 Method for fabricating a stacked, or crown shaped, capacitor structure Dahcheng Lin, Hsi-Chuan Chen 1999-07-27
5913119 Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure Dahcheng Lin, Hsi-Chuan Chen 1999-06-15
5897352 Method of manufacturing hemispherical grained polysilicon with improved adhesion and reduced capacitance depletion Dahcheng Lin, Hsi-Chuan Chen 1999-04-27
5877052 Resolution of hemispherical grained silicon peeling and row-disturb problems for dynamic random access memory, stacked capacitor structures Dahcheng Lin, Hsi-Chuan Chen, Kuo-Shu Tseng 1999-03-02