Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12113128 | DMOS transistor having thick gate oxide and STI and method of fabricating | Alexei Sadovnikov | 2024-10-08 |
| 11791405 | Transistor having an emitter region with a silicide spaced apart from a base contact | Alexei Sadovnikov | 2023-10-17 |
| 11588019 | Bipolar junction transistor with constricted collector region having high gain and early voltage product | Alexei Sadovnikov | 2023-02-21 |
| 11469315 | Bipolar junction transistor with biased structure between base and emitter regions | Alexei Sadovnikov, Guruvayurappan Mathur | 2022-10-11 |
| 11217665 | Bipolar junction transistor with constricted collector region having high gain and early voltage product | Alexei Sadovnikov | 2022-01-04 |
| 11094806 | Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region | Alexei Sadovnikov | 2021-08-17 |
| 11049967 | DMOS transistor having thick gate oxide and STI and method of fabricating | Alexei Sadovnikov | 2021-06-29 |
| 10224402 | Method of improving lateral BJT characteristics in BCD technology | Alexei Sadovnikov | 2019-03-05 |
| 9831135 | Method of forming a biCMOS semiconductor chip that increases the betas of the bipolar transistors | Alexei Sadovnikov, Andrew Strachan | 2017-11-28 |
| 9595480 | Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistors | Alexei Sadovnikov, Andrew Strachan | 2017-03-14 |
| 8669157 | Non-volatile memory cell having a heating element and a substrate-based control gate | Jeffrey A. Babcock, Yuri Mirgorodski, Saurabh Desai | 2014-03-11 |
| 8247862 | Method of enhancing charge storage in an E2PROM cell | Jeff Babcock, Yuri Mirgorodski, Saurabh Desai | 2012-08-21 |
| 8207559 | Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures | Jeffrey A. Babcock, Saurabh Desai, Alexei Sadovnikov, Zia A. Shafi | 2012-06-26 |
| 8183621 | Non-volatile memory cell having a heating element and a substrate-based control gate | Jeffrey A. Babcock, Yuri Mirgorodski, Saurabh Desai | 2012-05-22 |
| 7919805 | Non-volatile memory cell with two capacitors and one PNP transistor and a method of forming such a cell in a 1-poly SOI technology | Yuri Mirgorodski, Saurabh Desai | 2011-04-05 |
| 7919807 | Non-volatile memory cell with heating element | Jeffrey A. Babcock, Yuri Mirgorodski, Saurabh Desai | 2011-04-05 |
| 7719048 | Heating element for enhanced E2PROM | Jeff Babcock, Yuri Mirgorodski, Saurabh Desai | 2010-05-18 |
| 7425741 | EEPROM structure with improved data retention utilizing biased metal plate and conductive layer exclusion | Andrew Strachan, Saurabh Desai, Roozbeh Parsa, Yuri Mirgorodski | 2008-09-16 |