| 12218188 |
Deep trench intersections |
Binghua Hu, Ye Shao |
2025-02-04 |
| 11869933 |
Device isolator with reduced parasitic capacitance |
Raja Selvaraj, Anant Shankar Kamath, Byron Lovell Williams, Thomas D. Bonifield |
2024-01-09 |
| 11626317 |
Deep trench isolation with segmented deep trench |
Binghua Hu, Ye Shao |
2023-04-11 |
| 11587864 |
Stacked capacitor |
Poornika Fernandes, Ye Shao, Guruvayurappan Mathur, Paul Stulik |
2023-02-21 |
| 11222841 |
Stacked capacitor |
Poornika Fernandes, Ye Shao, Guruvayurappan Mathur, Paul Stulik |
2022-01-11 |
| 11107883 |
Device isolator with reduced parasitic capacitance |
Raja Selvaraj, Anant Shankar Kamath, Byron Lovell Williams, Thomas D. Bonifield |
2021-08-31 |
| 11101342 |
Deep trench intersections |
Binghua Hu, Ye Shao |
2021-08-24 |
| 10186576 |
Device isolator with reduced parasitic capacitance |
Raja Selvaraj, Anant Shankar Kamath, Byron Lovell Williams, Thomas D. Bonifield |
2019-01-22 |
| 9806148 |
Device isolator with reduced parasitic capacitance |
Raja Selvaraj, Anant Shankar Kamath, Byron Lovell Williams, Thomas D. Bonifield |
2017-10-31 |
| 7112953 |
Method for detecting epitaxial (EPI) induced buried layer shifts in semiconductor devices |
Xinfen Chen, Xiaoju Wu, Qingfeng Wang |
2006-09-26 |
| 6284617 |
Metalization outside protective overcoat for improved capacitors and inductors |
John P. Erdeljac, Louis N. Hutter, M. Ali Khatibzadeh |
2001-09-04 |
| 6284669 |
Power transistor with silicided gate and contacts |
John P. Erdeljac, Louis N. Hutter, Jeffrey P. Smith, Han-Tzong Yuan, Jau-Yuann Yang +3 more |
2001-09-04 |
| 6236101 |
Metallization outside protective overcoat for improved capacitors and inductors |
John P. Erdeljac, Louis N. Hutter, M. Ali Khatibzadeh |
2001-05-22 |