Issued Patents All Time
Showing 51–61 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9660052 | Strained source and drain (SSD) structure and method for forming the same | Che-Cheng Chang, Yi-Jen Chen, Yung-Jung Chang | 2017-05-23 |
| 9653605 | Fin field effect transistor (FinFET) device and method for forming the same | Zhe Zhang, Chang-Yin Chen, Che-Cheng Chang, Yung-Jung Chang | 2017-05-16 |
| 9646871 | Semiconductor structure with shallow trench isolation and manufacturing method thereof | Che-Cheng Chang, Jui Fu Hseih, Mu-Tsang Lin | 2017-05-09 |
| 9627512 | Field effect transistor with non-doped channel | Chang-Yin Chen, Che-Cheng Chang, Mu-Tsang Lin | 2017-04-18 |
| 9620417 | Apparatus and method of manufacturing fin-FET devices | Chang-Yin Chen, Che-Cheng Chang, Jr-Jung Lin, Chih-Han Lin | 2017-04-11 |
| 9564528 | Semiconductor device and manufacturing method thereof | Cheng-Yen Yu, Che-Cheng Chang, Zhe Zhang, Bo-Feng Young | 2017-02-07 |
| 9559207 | Semiconductor device having epitaxy structure | Wei-Yang Lo, Shih-Hao Chen, Mu-Tsang Lin | 2017-01-31 |
| 9559165 | Semiconductor structure with strained source and drain structures and method for forming the same | Chang-Yin Chen, Che-Cheng Chang, Mu-Tsang Lin | 2017-01-31 |
| 9543381 | Semiconductor structure and manufacturing method of the same | Chang-Yin Chen, Che-Cheng Chang, Po-Chi Wu, Jr-Jung Lin, Chih-Han Lin | 2017-01-10 |
| 9508719 | Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same | Chang-Yin Chen, Che-Cheng Chang, Chun-Lung Ni, Jr-Jung Lin, Chih-Han Lin | 2016-11-29 |
| 9142672 | Strained source and drain (SSD) structure and method for forming the same | Che-Cheng Chang, Yi-Jen Chen, Yung-Jung Chang | 2015-09-22 |