Issued Patents All Time
Showing 76–100 of 136 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9659826 | Asymmetric source/drain depths | Cheng-Yi Peng, Yu-Lin Yang, Chia-Cheng Ho, Jung-Piao Chiu, Chih Chieh Yeh +2 more | 2017-05-23 |
| 9647071 | FINFET structures and methods of forming the same | Cheng-Yi Peng, Chih Chieh Yeh | 2017-05-09 |
| 9640441 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Feng Yuan, Chih Chieh Yeh | 2017-05-02 |
| 9601587 | Semiconductor device having elevated structure | Sey-Ping Sun, Chin-Hsiang Lin, Chih-Hao Chang, Chen-Nan Yeh, Chao-An Jong | 2017-03-21 |
| 9577071 | Method of making a strained structure of a semiconductor device | Chih Chieh Yeh, Feng Yuan, Cheng-Yi Peng, Clement Hsingjen Wann | 2017-02-21 |
| 9564529 | Method for fabricating a strained structure and structure formed | Chih-Hao Chang, Chih-Hsin Ko, Feng Yuan, Jeff J. Xu | 2017-02-07 |
| 9558650 | Surveillance method, surveillance apparatus, and marking module | Yu-Chin Chou, Wei-Hsiao Wang, Hsin-Yen Lee, Jui-Hsuan Chiang, Chih-Hsin Tsao | 2017-01-31 |
| 9515071 | Asymmetric source/drain depths | Cheng-Yi Peng, Yu-Lin Yang, Chia-Cheng Ho, Jung-Piao Chiu, Chih Chieh Yeh +2 more | 2016-12-06 |
| 9484462 | Fin structure of fin field effect transistor | Feng Yuan, Hung-Ming Chen, Chang-Yun Chang, Clement Hsingjen Wann | 2016-11-01 |
| 9425102 | FinFETs with different fin heights | Chih Chieh Yeh, Chang-Yun Chang, Feng Yuan | 2016-08-23 |
| 9419134 | Strain enhancement for FinFETs | Chih Chieh Yeh, Feng Yuan, Hung-Li Chiang, Wei-Jen Lai | 2016-08-16 |
| 9397097 | Gate structure for semiconductor device | Feng Yuan, Chih Chieh Yeh, Wei-Jen Lai | 2016-07-19 |
| 9385046 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Feng Yuan, Chih Chieh Yeh | 2016-07-05 |
| 9349652 | Method of forming semiconductor device with different threshold voltages | Chia-Cheng Ho, Cheng-Yi Peng, Chih Chieh Yeh, Jung-Piao Chiu | 2016-05-24 |
| 9331081 | Semiconductor structure and manufacturing method thereof | Chun-Ming Lin, Chiu-Hua Chung, Yu-Shine Lin, Bor-Wen Lai | 2016-05-03 |
| 9263342 | Semiconductor device having a strained region | Feng Yuan, Hung-Li Chiang, Chih Chieh Yeh | 2016-02-16 |
| 9257344 | FinFETs with different fin height and EPI height setting | Hung-Li Chiang, Wei-Jen Lai, Feng Yuan, Chih Chieh Yeh | 2016-02-09 |
| 9177801 | FinFET device having a strained region | Feng Yuan, Hung-Li Chiang, Chih Chieh Yeh | 2015-11-03 |
| 9171929 | Strained structure of semiconductor device and method of making the strained structure | Chih Chieh Yeh, Feng Yuan, Cheng-Yi Peng, Clement Hsingjen Wann | 2015-10-27 |
| 9147594 | Method for fabricating a strained structure | Chih-Hao Chang, Chih-Hsin Ko, Feng Yuan, Jeff J. Xu | 2015-09-29 |
| 9112052 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Feng Yuan, Chih Chieh Yeh | 2015-08-18 |
| 9087725 | FinFETs with different fin height and EPI height setting | Chih Chieh Yeh, Feng Yuan, Hung-Li Chiang, Wei-Jen Lai | 2015-07-21 |
| 8946828 | Semiconductor device having elevated structure and method of manufacturing the same | Sey-Ping Sun, Chin-Hsiang Lin, Chih-Hao Chang, Chen-Nan Yeh, Chao-An Jong | 2015-02-03 |
| 8941153 | FinFETs with different fin heights | Chih Chieh Yeh, Chang-Yun Chang, Feng Yuan | 2015-01-27 |
| 8878308 | Multi-fin device by self-aligned castle fin formation | Hsin-Chih Chen, Feng Yuan | 2014-11-04 |