Issued Patents All Time
Showing 126–150 of 180 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11404574 | P-type strained channel in a fin field effect transistor (FinFET) device | Huai-Tei Yang, Shih-Chieh Chang, Shu Kuan, Cheng-Han Lee | 2022-08-02 |
| 11404327 | Gate structure and method of forming same | Chandrashekhar Prakash Savant, Chun Hsiung Tsai | 2022-08-02 |
| 11393713 | Semiconductor device and manufacturing method therefore | Clement Hsinghen Wann, Chun Hsiung Tsai, Che-Chih Hsu, Chinyu Su, Po-Han Tseng +3 more | 2022-07-19 |
| 11393898 | Method of manufacturing a semiconductor device and a semiconductor device | Shu Kuan, Chien-Chih Lin, Cheng-Han Lee, Shih-Chieh Chang | 2022-07-19 |
| 11367784 | Method of manufacturing a semiconductor device and a semiconductor device | Chien-Chih Lin, Cheng-Han Lee, Shih-Chieh Chang, Shu Kuan | 2022-06-21 |
| 11355587 | Source/drain EPI structure for device boost | — | 2022-06-07 |
| 11342434 | Method of manufacturing semiconductor devices and semiconductor devices | Chandrashekhar Prakash Savant, Tien-Wei Yu, Chia-Ming Tsai | 2022-05-24 |
| 11342228 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Chih-Yu Ma, Zheng-Yang Pan, Shih-Chieh Chang, Cheng-Han Lee | 2022-05-24 |
| 11329163 | Method of manufacturing a semiconductor device and a semiconductor device | Chun Hsiung Tsai | 2022-05-10 |
| 11316046 | Method of manufacturing a semiconductor device and a semiconductor device | Chun Hsiung Tsai | 2022-04-26 |
| 11315834 | FinFETs with epitaxy regions having mixed wavy and non-wavy portions | — | 2022-04-26 |
| 11315838 | FinFET device and method of forming same | Chien-Chih Lin, Kun-Yu Lee, Cheng-Han Lee, Shih-Chieh Chang | 2022-04-26 |
| 11276766 | FinFET fabrication methods | Chun Hsiung Tsai, Cheng-Yi Peng, Yin-Pin Wang, Kuo-Feng Yu, Da-Wen Lin +1 more | 2022-03-15 |
| 11264513 | Isolation structures for transistors | Chun Hsiung Tsai | 2022-03-01 |
| 11264478 | Transistors with reduced defect and methods forming same | Chandrashekhar Prakash Savant, Tien-Wei Yu, Chia-Ming Tsai | 2022-03-01 |
| 11251092 | Gate structure of a semiconductor device and method of forming same | Chandrashekhar Prakash Savant, Chun Hsiung Tsai | 2022-02-15 |
| 11233123 | Fully strained channel | Huai-Tei Yang, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang, Cheng-Han Lee | 2022-01-25 |
| 11222963 | Semiconductor device and method | Shih-Chieh Chang | 2022-01-11 |
| 11201205 | Interconnect layout for semiconductor device | Chun Hsiung Tsai, Yu-Ming Lin, Clement Hsingjen Wann | 2021-12-14 |
| 11171220 | Structure and method for high-K metal gate | Cheng-Han Lee, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang | 2021-11-09 |
| 11094826 | FinFET device and method of forming same | Shih-Chieh Chang | 2021-08-17 |
| 11011433 | NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers | Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang | 2021-05-18 |
| 10991826 | Semiconductor device and methods of forming same | Chih-Yu Ma, Yi-Min Huang, Shih-Chieh Chang | 2021-04-27 |
| 10991800 | Method for FinFET LDD doping | Chun Hsiung Tsai, Ya-Yun Cheng, Cheng-Yi Peng, Wei-Yang Lee, Kuo-Feng Yu +2 more | 2021-04-27 |
| 10930781 | P-type strained channel in a fin field effect transistor (FinFET) device | Huai-Tei Yang, Shih-Chieh Chang, Shu Kuan, Cheng-Han Lee | 2021-02-23 |