Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12349432 | Enlarged backside contact | Bwo-Ning Chen, Xusheng Wu, Yuh-Sheng Jean, Chang-Miao Liu | 2025-07-01 |
| 12068392 | FinFET fabrication methods | Chun Hsiung Tsai, Cheng-Yi Peng, Kuo-Feng Yu, Da-Wen Lin, Jian-Hao Chen +1 more | 2024-08-20 |
| 11735430 | Fin field-effect transistor device and method | Hung-Ju Chou, Jiun-Ming Kuo, Wei-Ken Lin, Chun Te Li | 2023-08-22 |
| 11276766 | FinFET fabrication methods | Chun Hsiung Tsai, Cheng-Yi Peng, Kuo-Feng Yu, Da-Wen Lin, Jian-Hao Chen +1 more | 2022-03-15 |
| 11271692 | Special subframe utilization for NB-IoT transmission in TDD mode | Yutao Sui, Johan Bergman, Xingqin Lin, Gerardo Agni Medina Acosta | 2022-03-08 |
| 10964548 | Fin field-effect transistor device and method | Hung-Ju Chou, Jiun-Ming Kuo, Wei-Ken Lin, Chun Te Li | 2021-03-30 |
| 10504898 | Fin field-effect transistor structure and method for forming the same | Chien-Chih Lin, Chien-Tai Chan, Wei-Ken Lin, Chun Te Li | 2019-12-10 |
| 10497577 | Fin field-effect transistor device and method | Hung-Ju Chou, Jiun-Ming Kuo, Wei-Ken Lin, Chun Te Li | 2019-12-03 |
| 10468500 | FinFET fabrication methods | Chun Hsiung Tsai, Cheng-Yi Peng, Kuo-Feng Yu, Da-Wen Lin, Jian-Hao Chen +1 more | 2019-11-05 |
| 9466716 | Dual-SiGe epitaxy for MOS devices | — | 2016-10-11 |
| 8848675 | Time-division multiplexed pilot signal for integrated mobile broadcasts | Gregory E. Bottomley, Dirk Gerstenberger, Lars Lindbom | 2014-09-30 |
| 7750338 | Dual-SiGe epitaxy for MOS devices | — | 2010-07-06 |
| 7453121 | Body contact formation in partially depleted silicon on insulator device | Shui-Ming Cheng, Ka-Hing Fung | 2008-11-18 |
| 7449753 | Write margin improvement for SRAM cells with SiGe stressors | Carlos H. Diaz | 2008-11-11 |
| 7253062 | Semiconductor device with asymmetric pocket implants | Chin-Sheng Chang | 2007-08-07 |
| 7129547 | Method of fabricating a high performance MOSFET device featuring formation of an elevated source/drain region | Chih-Sheng Chang | 2006-10-31 |
| 7009248 | Semiconductor device with asymmetric pocket implants | Chin-Sheng Chang | 2006-03-07 |
| 6960512 | Method for manufacturing a semiconductor device having an improved disposable spacer | Shui-Ming Cheng, Ka-Hing Fung, Kuan-Lun Cheng, Huan-Tsung Huang | 2005-11-01 |
| 6902980 | Method of fabricating a high performance MOSFET device featuring formation of an elevated source/drain region | Chih-Sheng Chang | 2005-06-07 |
| 6656845 | Method for forming semiconductor substrate with convex shaped active region | Hsin-Yi Lee | 2003-12-02 |
| 6277709 | Method of forming shallow trench isolation structure | Chung-Ju Lee, Wen-Jya Liang, Jhy-Weei Hsia, Fu-Liang Yang, Yuh-Sheng Chern | 2001-08-21 |