Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7589000 | Fabrication method and fabrication apparatus of group III nitride crystal substance | Hitoshi Kasai, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri, Fumitaka Sato +4 more | 2009-09-15 |
| 7534310 | Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate | Kensaku Motoki, Ryu Hirota, Seiji Nakahata | 2009-05-19 |
| 7531889 | Epitaxial substrate and semiconductor element | Makoto Kiyama, Takashi Sakurada | 2009-05-12 |
| 7521339 | GaN single crystal substrate and method of making the same | Kensaku Motoki, Naoki Matsumoto | 2009-04-21 |
| 7504323 | GaN single crystal substrate and method of making the same | Kensaku Motoki, Naoki Matsumoto | 2009-03-17 |
| 7481881 | Method of manufacturing GaN crystal substrate | — | 2009-01-27 |
| 7473315 | AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate | Seiji Nakahata, Ryu Hirota, Kensaku Motoki, Koji Uematsu | 2009-01-06 |
| 7390359 | Nitride semiconductor wafer | Michimasa Miyanaga, Koji Uematsu | 2008-06-24 |
| 7357837 | GaN single crystal substrate and method of making the same | Kensaku Motoki, Naoki Matsumoto | 2008-04-15 |
| 7354477 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate | Kensaku Motoki, Ryu Hirota, Seiji Nakahata | 2008-04-08 |
| 7351347 | Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate | Katsushi Akita | 2008-04-01 |
| 7303630 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate | Kensaku Motoki, Ryu Hirota, Seiji Nakahata, Koji Uematsu | 2007-12-04 |
| 7112826 | Single crystal GaN substrate semiconductor device | Kensaku Motoki, Seiji Nakahata, Ryu Hirota, Koji Uematsu | 2006-09-26 |
| 7105865 | AlxInyGa1−x−yN mixture crystal substrate | Seiji Nakahata, Ryu Hirota, Kensaku Motoki, Kouji Uematsu | 2006-09-12 |
| 7087114 | Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate | Kensaku Motoki, Ryu Hirota, Seiji Nakahata | 2006-08-08 |
| 6693021 | GaN single crystal substrate and method of making the same | Kensaku Motoki, Naoki Matsumoto | 2004-02-17 |
| 6667184 | Single crystal GaN substrate, method of growing same and method of producing same | Kensaku Motoki, Seiji Nakahata, Ryu Hirota, Koji Uematsu | 2003-12-23 |
| 6468882 | Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate | Kensaku Motoki, Hitoshi Kasai | 2002-10-22 |
| 6468347 | Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate | Kensaku Motoki, Naoki Matsumoto | 2002-10-22 |
| 6413627 | GaN single crystal substrate and method of producing same | Kensaku Motoki, Naoki Matsumoto, Tatsuya Nishimoto | 2002-07-02 |
| 6031252 | Epitaxial wafer and method of preparing the same | Yoshiki Miura, Mitsuru Shimazu, Kensaku Motoki, Masato Matsushima, Hisashi Seki +1 more | 2000-02-29 |
| 5970314 | Process for vapor phase epitaxy of compound semiconductor | Mitsuru Shimazu, Masato Matsushima, Yoshiki Miura, Kensaku Motoki, Hisashi Seki +1 more | 1999-10-19 |