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— |
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Procedure for in-situ determination of thermal gradients at the crystal growth front |
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Method and apparatus for controlling the growth process of a monocrystalline silicon ingot |
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Method for correcting speed deviations between actual and nominal pull speed during crystal growth |
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Procedure for in-situ determination of thermal gradients at the crystal growth front |
Andrzej Buczkowski, Joel Kearns, Keiichi Takanashi, Volker Todt |
2012-07-17 |
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Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process |
Joel Kearns, Keiichi Takanashi, Volker Todt |
2011-09-06 |
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Method for determining a minority carrier diffusion length using surface photo voltage measurements |
Andrzej Buczkowski, Fritz Kirscht |
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Method and device for determining the dependence of a first measuring quantity on a second measuring quantity |
Jan Helm, Bernd Srocka |
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