Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7622368 | Forming of a single-crystal semiconductor layer portion separated from a substrate | Nicolas Loubet, Alexandre Talbot | 2009-11-24 |
| 6873088 | Vibratory beam electromechanical resonator | Thomas Skotnicki, Pascal Ribot | 2005-03-29 |
| 6852993 | Emission process for a single photon, corresponding semiconducting device and manufacturing process | Stephane Monfray, Frederic Boeuf | 2005-02-08 |
| 6776842 | Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic | Patrick Jerier | 2004-08-17 |
| 6744080 | Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistor | Alain Chantre, Helene Baudry | 2004-06-01 |
| 6656812 | Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process | Michel Marty, Alain Chantre, Sebastien Jouan, Pierre Llinares | 2003-12-02 |
| 6642096 | Bipolar transistor manufacturing | Alain Chantre, Michel Marty, Sebastien Jouan | 2003-11-04 |
| 6642108 | Fabrication processes for semiconductor non-volatile memory device | Thomas Skotnicki, Pascal Ribot, Maryse Paoli, Richard Fournel | 2003-11-04 |
| 6583451 | Process for fabricating a network of nanometric lines made of single-crystal silicon and device obtained | Thomas Skotnicki, Malgorzata Jurczak | 2003-06-24 |
| 6537894 | Process for fabricating a substrate of the silicon-on-insulator or silicon-on-nothing type and resulting device | Thomas Skotnicki, Michel Haond | 2003-03-25 |
| 6472262 | Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor | Alain Chantre, Helene Baudry | 2002-10-29 |
| 6294443 | Method of epitaxy on a silicon substrate comprising areas heavily doped with boron | Patrick Jerier | 2001-09-25 |
| 6238941 | Characterizing of silicon-germanium areas on silicon | Jean-Claude Oberlin | 2001-05-29 |
| 6218723 | Integrated capacitor with high voltage linearity and low series resistance | Philippe Delpech, Etienne Robilliart | 2001-04-17 |
| 6177717 | Low-noise vertical bipolar transistor and corresponding fabrication process | Alain Chantre, Michel Marty, Augustin Monroy, Michel Laurens, François Guette | 2001-01-23 |
| 6162706 | Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic | Patrick Jerier | 2000-12-19 |
| 6132806 | Method of implementation of MOS transistor gates with a high content | — | 2000-10-17 |
| 5994676 | Method for calibrating the temperature of an epitaxy reactor | — | 1999-11-30 |
| 5252181 | Method for cleaning the surface of a substrate with plasma | Daniel Bensahel, Jorge Regolini | 1993-10-12 |
| 4813781 | Method of measuring the flowing of a material | Annie Tissier | 1989-03-21 |
| 4725561 | Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization | Michel Haond, Jean-Pierre Colinge, Daniel Bensahel | 1988-02-16 |
| 4678538 | Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects | Michel Haond, Daniel Bensahel | 1987-07-07 |