FL

Fabrice Letertre

ST S.O.I. Tec Silicon On Insulator Technologies: 59 patents #2 of 155Top 2%
SO Soitec: 19 patents #14 of 259Top 6%
CEA: 10 patents #375 of 7,956Top 5%
EX Exagan: 1 patents #4 of 8Top 50%
📍 Meylan, FR: #1 of 946 inventorsTop 1%
Overall (All Time): #21,105 of 4,157,543Top 1%
83
Patents All Time

Issued Patents All Time

Showing 1–25 of 83 patents

Patent #TitleCo-InventorsDate
12112976 Pseudo-substrate with improved efficiency of usage of single crystal material Oleg Kononchuk 2024-10-08
10910256 Pseudo-substrate with improved efficiency of usage of single crystal material Oleg Kononchuk 2021-02-02
10672746 Integrated circuit formed from a stack of two series-connected chips Domenico Lo Verde, Laurent Guillot 2020-06-02
10002763 Fabrication of substrates with a useful layer of monocrystalline semiconductor material Bruno Ghyselen, Olivier Rayssac 2018-06-19
9041165 Relaxation and transfer of strained material layers Bruce Faure, Pascal Guenard 2015-05-26
8991673 Substrate cutting device and method Olivier Rayssac 2015-03-31
8951887 Process for fabricating a semiconductor structure employing a temporary bond Didier Landru 2015-02-10
8759881 Heterostructure for electronic power components, optoelectronic or photovoltaic components Jean-Marc Bethoux, Chris Werkhoven, Ionut Radu, Oleg Kononchuck 2014-06-24
8679946 Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate Hubert Moriceau, Bernard Aspar, Eric Jalaguier 2014-03-25
8679942 Strain engineered composite semiconductor substrates and methods of forming same Jean-Marc Bethoux, Alice Boussagol 2014-03-25
8541290 Optoelectronic substrate and methods of making same Bruce Faure 2013-09-24
8507361 Fabrication of substrates with a useful layer of monocrystalline semiconductor material Bruno Ghyselen, Olivier Rayssac 2013-08-13
8492244 Methods for relaxation and transfer of strained layers and structures fabricated thereby Pascal Guenard, Bruce Faure, Michael R. Krames, Nathan Gardner, Melvin McLaurin 2013-07-23
8486771 Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same Bruce Faure, Michael R. Krames, Nathan Gardner 2013-07-16
8487295 Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer 2013-07-16
8481409 Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate Hubert Moriceau, Bernard Aspar, Eric Jalaguier 2013-07-09
8481408 Relaxation of strained layers Carlos Mazure, Michael R. Krames, Melvin McLaurin, Nathan Gardner 2013-07-09
8461014 Methods of fabricating semiconductor structures and devices with strained semiconductor material 2013-06-11
8343782 Semiconductor device having an InGaN layer 2013-01-01
8252664 Fabrication of substrates with a useful layer of monocrystalline semiconductor material Bruno Ghyselen, Olivier Rayssac 2012-08-28
8216368 Method of fabricating an epitaxially grown layer Bruce Faure 2012-07-10
8154022 Process for fabricating a structure for epitaxy without an exclusion zone Chantal Arena 2012-04-10
8114754 Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods 2012-02-14
8093687 Methods for forming an assembly for transfer of a useful layer using a peripheral recess area to facilitate transfer Olivier Rayssac 2012-01-10
8083115 Substrate cutting device and method Olivier Rayssac 2011-12-27