Issued Patents All Time
Showing 126–150 of 153 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7983011 | AP1 layer for TMR device | Chyu-Jiuh Torng, Hui-Chuan Wang | 2011-07-19 |
| 7978439 | TMR or CPP structure with improved exchange properties | Kunliang Zhang, Hui-Chuan Wang, Min Li | 2011-07-12 |
| 7950136 | Process of making an improved AP1 layer for a TMR device | Chyu-Jiuh Torng, Hui-Chuan Wang | 2011-05-31 |
| 7916513 | Non-destructive read back for ferroelectric data storage device | Shan Hu, Florin Zavaliche, Joachim Walter Ahner, Stephen John Wrazien, Martin Gerard Forrester | 2011-03-29 |
| 7876661 | Non-destructive readback for ferroelectric material | Martin Gerard Forrester, Florin Zavaliche, Dierk Guenter Bolten, Andreas Roelofs | 2011-01-25 |
| 7861401 | Method of forming a high performance tunneling magnetoresistive (TMR) element | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2011-01-04 |
| 7838066 | Ferroelectric media with robust servo marks and storage areas with low leakage current | Andreas Roelofs, Cedric Bedoya | 2010-11-23 |
| 7829963 | TMR device with Hf based seed layer | Hui-Chuan Wang, Kunliang Zhang, Min Li | 2010-11-09 |
| 7821808 | Multilayer ferroelectric data storage system with regenerative read | Martin Gerard Forrester, Florin Zavaliche, Joachim Walter Ahner | 2010-10-26 |
| 7796494 | Asymmetric write for ferroelectric storage | Andreas Roelofs, Martin Gerard Forrester | 2010-09-14 |
| 7792009 | Ferroelectric polarization pattern with differing feedback signals | Florin Zavaliche, Philip G. Pitcher, Dierk Guenter Bolten | 2010-09-07 |
| 7780820 | Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier | Kunliang Zhang, Hui-Chuan Wang, Yu-Hsia Chen, Min Li | 2010-08-24 |
| 7742261 | Tunneling magneto-resistive spin valve sensor with novel composite free layer | Hui-Chuan Wang, Chyu-Jiuh Torng | 2010-06-22 |
| 7672088 | Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications | Kunliang Zhang, Min Li, Yu-Hsia Chen, Hui-Chuan Wang | 2010-03-02 |
| 7646568 | Ultra thin seed layer for CPP or TMR structure | Kunliang Zhang, Hui-Chuan Wang, Yu-Hsia Chen, Min Li, Cherng-Chyi Han | 2010-01-12 |
| 7602590 | Tunneling magneto-resistive spin valve sensor with novel composite free layer | Hui-Chuan Wang, Chyu-Jiuh Torng | 2009-10-13 |
| 7602033 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Hui-Chuan Wang, Kunliang Zhang, Yu-Hsia Chen, Min Li | 2009-10-13 |
| 7564658 | CoFe insertion for exchange bias and sensor improvement | Kunliang Zhang, Hui-Chuan Wang, Min Li, Chyu-Jiuh Torng | 2009-07-21 |
| 7538987 | CPP spin-valve element | Hideo Fujiwara, Keiichi Nagasaka, William H. Butler, Julian Velev, Amrit Bandyopadhyay | 2009-05-26 |
| 7528457 | Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R | Cheng T. Horng, Hui-Chuan Wang, Min Li, Ru-Ying Tong, Yimin Guo | 2009-05-05 |
| 7497007 | Process of manufacturing a TMR device | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2009-03-03 |
| 7476954 | TMR device with Hf based seed layer | Hui-Chuan Wang, Kunliang Zhang, Min Li | 2009-01-13 |
| 7431961 | Composite free layer for CIP GMR device | Hui-Chuan Wang, Yun-Fei Li, Chyu-Jiuh Torng | 2008-10-07 |
| 7390530 | Structure and process for composite free layer in CPP GMR device | Hui-Chuan Wang, Min Li, Kunliang Zhang, Chyu-Jiuh Torng | 2008-06-24 |
| 7377025 | Method of forming an improved AP1 layer for a TMR device | Chyu-Jiuh Torng, Hui-Chuan Wang | 2008-05-27 |