Issued Patents All Time
Showing 101–125 of 153 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8653615 | MR device with synthetic free layer structure | Hui-Chuan Wang, Yu Chen Zhou, Min Li, Kunliang Zhang | 2014-02-18 |
| 8557407 | Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier | Kunliang Zhang, Hui-Chuan Wang, Yu-Hsia Chen, Min Li | 2013-10-15 |
| 8514673 | Layered near-field transducer | Michael C. Kautzky, Amit Vasant Itagi, Michael Allen Seigler | 2013-08-20 |
| 8477454 | Recording head for heat assisted magnetic recording with diffusion barrier surrounding a near field transducer | Jie Zou, Kaizhong Gao, William Albert Challener, Mark Ostrowski, Venkateswara Rao Inturi +1 more | 2013-07-02 |
| 8472151 | TMR device with low magnetorestriction free layer | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2013-06-25 |
| 8456781 | TMR device with novel free layer structure | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2013-06-04 |
| 8427925 | HAMR NFT materials with improved thermal stability | Michael C. Kautzky, William Albert Challener, Michael Allen Seigler | 2013-04-23 |
| 8385027 | TMR device with novel free layer structure | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2013-02-26 |
| 8339740 | Recording head for heat assisted magnetic recording with diffusion barrier surrounding a near field transducer | Jie Zou, Kaizhong Gao, William Albert Challener, Mark Ostrowski, Venkateswara Rao Inturi +1 more | 2012-12-25 |
| 8337676 | Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier | Kunliang Zhang, Hui-Chuan Wang, Yu-Hsia Chen, Min Li | 2012-12-25 |
| 8339754 | TMR or CPP structure with improved exchange properties | Kunliang Zhang, Hui-Chuan Wang, Min Li | 2012-12-25 |
| 8335105 | Magnetic memory cell | Hui-Chuan Wang, Kunliang Zhang, Min Li | 2012-12-18 |
| 8325448 | Pinning field in MR devices despite higher annealing temperature | Kunliang Zhang, Shengyuan Wang, Min Li, Hui-Chuan Wang | 2012-12-04 |
| 8289663 | Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers | Kunliang Zhang, Hui-Chuan Wang, Min Li | 2012-10-16 |
| 8259420 | TMR device with novel free layer structure | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2012-09-04 |
| 8227701 | Reconfigurable electric circuitry and method of making same | Stephen John Wrazien, Florin Zavaliche, Joachim Walter Ahner, Martin Gerard Forrester, Shan Hu | 2012-07-24 |
| 8202572 | TMR device with improved MgO barrier | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2012-06-19 |
| 8164862 | Seed layer for TMR or CPP-GMR sensor | Kunliang Zhang, Hui-Chuan Wang, Min Li | 2012-04-24 |
| 8105703 | Process for composite free layer in CPP GMR or TMR device | Hui-Chuan Wang, Min Li, Kunliang Zhang, Chyu-Jiuh Torng | 2012-01-31 |
| 8059374 | TMR device with novel free layer structure | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2011-11-15 |
| 8035931 | Tunneling magneto-resistive spin valve sensor with novel composite free layer | Hui-Chuan Wang, Chyu-Jiuh Torng | 2011-10-11 |
| 8031445 | Low noise magneto-resistive sensor utilizing magnetic noise cancellation | Yuchen Zhou, Kunliang Zhang, Yu-Hsai Chen, Moris Dovek | 2011-10-04 |
| 8008740 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Hui-Chuan Wang, Kunliang Zhang, Yu-Hsia Chen, Min Li | 2011-08-30 |
| 8000215 | Voltage pattern for ferroelectric recording head | Andreas Roelofs, Martin Gerard Forrester | 2011-08-16 |
| 7986498 | TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer | Hui-Chuan Wang, Min Li, Kunliang Zhang | 2011-07-26 |