Issued Patents All Time
Showing 26–50 of 63 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11521984 | Three-dimensional memory device containing low resistance source-level contact and method of making thereof | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou | 2022-12-06 |
| 11482539 | Three-dimensional memory device including metal silicide source regions and methods for forming the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou | 2022-10-25 |
| 11450687 | Multibit ferroelectric memory cells and methods for forming the same | Roshan Jayakhar TIRUKKONDA, Ramy Nashed Bassely Said, Senaka Kanakamedala, Rahul Sharangpani, Raghuveer S. Makala +1 more | 2022-09-20 |
| 11437270 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Senaka Kanakamedala, Fumitaka Amano +1 more | 2022-09-06 |
| 11424231 | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same | Raghuveer S. Makala, Fei Zhou | 2022-08-23 |
| 11424265 | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same | Raghuveer S. Makala, Fei Zhou, Rahul Sharangpani | 2022-08-23 |
| 11309301 | Stacked die assembly including double-sided inter-die bonding connections and methods of forming the same | Fei Zhou, Raghuveer S. Makala, Rahul Sharangpani | 2022-04-19 |
| 11309332 | Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof | Raghuveer S. Makala, Rahul Sharangpani, Seung-Yeul Yang, Fei Zhou | 2022-04-19 |
| 11302716 | Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same | Raghuveer S. Makala, Yanli Zhang, Fei Zhou, Rahul Sharangpani, Seung-Yeul Yang | 2022-04-12 |
| 11282848 | Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same | Raghuveer S. Makala, Yanli Zhang, Fei Zhou, Rahul Sharangpani, Seung-Yeul Yang | 2022-03-22 |
| 11239254 | Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Seung-Yeul Yang | 2022-02-01 |
| 11239253 | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same | Raghuveer S. Makala, Fei Zhou | 2022-02-01 |
| 11217532 | Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Tatsuya Hinoue, Tomoyuki Obu +2 more | 2022-01-04 |
| 11201139 | Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same | Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala, Fei Zhou | 2021-12-14 |
| 11177280 | Three-dimensional memory device including wrap around word lines and methods of forming the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Yanli Zhang | 2021-11-16 |
| 11145628 | Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same | Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala, Fei Zhou | 2021-10-12 |
| 11127728 | Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same | Fei Zhou, Raghuveer S. Makala, Rahul Sharangpani | 2021-09-21 |
| 11121140 | Ferroelectric tunnel junction memory device with integrated ovonic threshold switches | Seung-Yeul Yang, Raghuveer S. Makala, Fei Zhou, Rahul Sharangpani | 2021-09-14 |
| 11114534 | Three-dimensional nor array including vertical word lines and discrete channels and methods of making the same | Fei Zhou, Raghuveer S. Makala, Yanli Zhang, Rahul Sharangpani | 2021-09-07 |
| 11049880 | Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same | Fei Zhou, Rahul Sharangpani, Raghuveer S. Makala | 2021-06-29 |
| 11024648 | Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same | Rahul Sharangpani, Raghuveer S. Makala, Yanli Zhang, Seung-Yeul Yang, Fei Zhou | 2021-06-01 |
| 10937809 | Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof | Rahul Sharangpani, Raghuveer S. Makala, Seung-Yeul Yang, Fei Zhou | 2021-03-02 |
| 10868025 | Three-dimensional memory device including replacement crystalline channels and methods of making the same | Fei Zhou, Rahul Sharangpani, Raghuveer S. Makala | 2020-12-15 |
| 10804291 | Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same | Fei Zhou, Rahul Sharangpani, Raghuveer S. Makala | 2020-10-13 |
| 10797060 | Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Srikanth Ranganathan, Akio Nishida +1 more | 2020-10-06 |