Issued Patents All Time
Showing 26–50 of 88 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9336876 | Soak time programming for two-terminal memory | Layne Armijo, Sung Hyun Jo | 2016-05-10 |
| 9324942 | Resistive memory cell with solid state diode | Hagop Nazarian, Sung Hyun Jo | 2016-04-26 |
| 9245622 | Pre-conditioning two-terminal memory for increased endurance | — | 2016-01-26 |
| 9191000 | Field programmable gate array utilizing two-terminal non-volatile memory | Hagop Nazarian, Sang Thanh Nguyen | 2015-11-17 |
| 9178149 | Surface treatment to improve resistive-switching characteristics | Michael Miller, Tony P. Chiang, Xiying Costa, Prashant B. Phatak, April D. Schricker | 2015-11-03 |
| 9058865 | Multi-level cell operation in silver/amorphous silicon RRAM | Sung Hyun Jo | 2015-06-16 |
| 9054702 | Field programmable gate array utilizing two-terminal non-volatile memory | Hagop Nazarian, Sang Thanh Nguyen | 2015-06-09 |
| 8971088 | Multi-level cell operation using zinc oxide switching material in non-volatile memory device | Sung Hyun Jo | 2015-03-03 |
| 8946669 | Resistive memory device and fabrication methods | Sung Hyun Jo, Kuk-Hwan Kim | 2015-02-03 |
| 8946673 | Resistive switching device structure with improved data retention for non-volatile memory device and method | — | 2015-02-03 |
| 8872151 | Surface treatment to improve resistive-switching characteristics | Michael Miller, Tony P. Chiang, Xiying Costa, Prashant B. Phatak, April D. Schricker | 2014-10-28 |
| 8754671 | Field programmable gate array utilizing two-terminal non-volatile memory | Hagop Nazarian, Sang Thanh Nguyen | 2014-06-17 |
| 8687410 | Nonvolatile memory cell comprising a diode and a resistance-switching material | Scott Brad Herner, Christopher J. Petti | 2014-04-01 |
| 8674724 | Field programmable gate array utilizing two-terminal non-volatile memory | Hagop Nazarian, Sang Thanh Nguyen | 2014-03-18 |
| 8659929 | Amorphous silicon RRAM with non-linear device and operation | — | 2014-02-25 |
| 8658476 | Low temperature P+ polycrystalline silicon material for non-volatile memory device | Xin Sun, Sung Hyun Jo | 2014-02-25 |
| 8592792 | Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride | Scott Brad Herner | 2013-11-26 |
| 8569172 | Noble metal/non-noble metal electrode for RRAM applications | Sung Hyun Jo, Kuk-Hwan Kim | 2013-10-29 |
| 8547725 | Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element | Roy E. Scheuerlein, Pankaj Kalra, Jingyan Zhang | 2013-10-01 |
| 8465996 | Surface treatment to improve resistive-switching characteristics | Michael Miller, Prashant B. Phatak, Tony P. Chiang, Xiyang Chen, April D. Schricker | 2013-06-18 |
| 8450835 | Reverse leakage reduction and vertical height shrinking of diode with halo doping | Xiying Chen, Mark Clark, S. Brad Herner | 2013-05-28 |
| 8349664 | Nonvolatile memory cell comprising a diode and a resistance-switching material | Scott Brad Herner, Christopher J. Petti | 2013-01-08 |
| 8349663 | Vertical diode based memory cells having a lowered programming voltage and methods of forming the same | S. Brad Herner | 2013-01-08 |
| 8274066 | Surface treatment to improve resistive-switching characteristics | Michael Miller, Prashant B. Phatak, Tony P. Chiang, Xiyang Chen, April D. Schricker | 2012-09-25 |
| 8227787 | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride | S. Brad Herner | 2012-07-24 |