Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7393615 | Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare | Seong-woon Choi, Tae-Moon Jeong, Shun-Yong Zinn, Woo-Sung Han, Jung Min Sohn | 2008-07-01 |
| 7185312 | Exposure method for correcting line width variation in a photomask | Seung-hune Yang, Ji-Hyeon Choi | 2007-02-27 |
| 7129024 | Electron beam lithography method | — | 2006-10-31 |
| 7065735 | Method for making an OPC mask and an OPC mask manufactured using the same | Seong-woon Choi | 2006-06-20 |
| 6835507 | Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare | Seong-woon Choi, Tae-Moon Jeong, Shun-Yong Zinn, Woo-Sung Han, Jung Min Sohn | 2004-12-28 |
| 6775815 | Exposure method for correcting line width variation in a photomask | Seung-hune Yang, Ji-Hyeon Choi | 2004-08-10 |
| 6689520 | Exposure method for correcting dimension variation in electron beam lithography | — | 2004-02-10 |
| 6617084 | Electron beam mask having dummy stripe(s) and lithographic method of manufacturing a semiconductor device using an E-beam mask having at least one defective pattern | — | 2003-09-09 |
| 6475684 | Method of correcting line width variation due to loading effect caused during etching of a photomask and recording medium formed according to the method | — | 2002-11-05 |
| 6291119 | Method of compensating for pattern dimension variation caused by re-scattered electron beam in electron beam lithography and recording medium in which the method is recorded | Ji-Hyeon Choi | 2001-09-18 |