Issued Patents All Time
Showing 51–75 of 86 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7232492 | Method of forming thin film for improved productivity | Weon-Hong Kim, Dae-Jin Kwon | 2007-06-19 |
| 7203052 | Method of fabricating MEMS tunable capacitor with wide tuning range | Kang-soo Chu, Weon-Hong Kim | 2007-04-10 |
| 7199003 | Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus therefor | Yong-Kuk Jeong, Myong Geun Yoon, Dae-Jin Kwon | 2007-04-03 |
| 7180120 | Semiconductor device having dual stacked MIM capacitor and method of fabricating the same | — | 2007-02-20 |
| 7180117 | Flat-type capacitor for integrated circuit and method of manufacturing the same | — | 2007-02-20 |
| 7166541 | Method of forming dielectric layer using plasma enhanced atomic layer deposition technique | Min-Woo Song, Yong-Kuk Jeong, Dae-Jin Kwon, Weon-Hong Kim | 2007-01-23 |
| 7125767 | Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same | Yong-Kuk Jeong, Jung-Hyoung Lee, Dae-Jin Kwon, Weon-Hong Kim, Min-Woo Song | 2006-10-24 |
| 7091548 | Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same | Yong-Kuk Jeong, Dae-Jin Kwon, Weon-Hong Kim | 2006-08-15 |
| 7084056 | Electrical interconnection, method of forming the electrical interconnection, image sensor having the electrical interconnection and method of manufacturing the image sensor | — | 2006-08-01 |
| 7049648 | Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof | Cha-young Yoo | 2006-05-23 |
| 7042042 | Integrated circuit capacitors having a dielectric layer between a U-shaped lower electrode and a support layer | Cha-young Yoo | 2006-05-09 |
| 7042698 | MEMS tunable capacitor with a wide tuning range and method of fabricating the same | Kang-soo Chu, Weon-Hong Kim | 2006-05-09 |
| 7018933 | Method of forming a metal-insulator-metal capacitor | Wan-don Kim, Jin Won Kim, Cha-young Yoo | 2006-03-28 |
| 7008837 | Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode | Jung-hee Chung, Yong-Kuk Jeong, Se-hoon Oh, Dae-Jin Kwon, Cha-young Yoo | 2006-03-07 |
| 7002788 | Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same | Yong-Kuk Jeong, Jung-Hyoung Lee, Dae-Jin Kwon, Weon-Hong Kim, Min-Woo Song | 2006-02-21 |
| 6946342 | Semiconductor device and method for manufacturing the same | Jae-Hyun Yeo, Sung Tae Kim, Young Sun Kim, In Sung Park, Yun-Jung Lee +2 more | 2005-09-20 |
| 6876029 | Integrated circuit capacitors having doped HSG electrodes | Seung Hwan Lee, Sang-Hyeop Lee, Young Sun Kim, Se-Jin Shim, You-Chan Jin +7 more | 2005-04-05 |
| 6844610 | Integrated circuit devices including a resistor pattern | Young-Wook Park | 2005-01-18 |
| 6750092 | Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby | Cha-young Yoo | 2004-06-15 |
| 6692795 | Method for fabricating semiconductor device having ruthenium layer and equipment for fabricating the same | Soon-yeon Park, Cha-young Yoo | 2004-02-17 |
| 6680251 | Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters | Cha-young Yoo, Sung Tae Kim, Young-Wook Park, Yun-Jung Lee, Soon-yeon Park | 2004-01-20 |
| 6677217 | Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumps | Jae Hyun Joo, Wan-don Kim, Soon-yeon Park | 2004-01-13 |
| 6667209 | Methods for forming semiconductor device capacitors that include an adhesive spacer that ensures stable operation | Yong-Kuk Jeong | 2003-12-23 |
| 6653155 | Integrated circuit devices including a resistor pattern and methods for manufacturing the same | Young-Wook Park | 2003-11-25 |
| 6653186 | Methods of fabrication integrated circuit capacitors having a dielectric layer between a u-shaped lower electrode and a support layer | Cha-young Yoo | 2003-11-25 |